Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method of growing gallium nitride crystal

A gallium nitride and crystal technology, which is applied in the field of manufacturing high-quality gallium nitride substrates, can solve the problems of undisclosed and constant formation of polarity inversion regions, etc.

Inactive Publication Date: 2008-03-19
SUMITOMO ELECTRIC IND LTD
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it does not disclose a method of constantly forming a polarity-reversed region as a crystal defect region H or its conditions

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of growing gallium nitride crystal
  • Method of growing gallium nitride crystal
  • Method of growing gallium nitride crystal

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0111] Example 1 (the degree of formation of the polarity reversal region J caused by the first growth temperature Tj)

[0112] 1. Base substrate (U)

[0113] A 2-inch diameter sapphire substrate (U1), a GaAs substrate (U2), and a sapphire substrate (U3) (on which a 1.5 μm thick GaN epitaxial layer was formed by the MOCVD method) were prepared as base substrates. The sapphire substrate (U1) is a substrate whose C plane ((0001) plane) is the main surface. The GaAs substrate (U2) is a substrate having a (111)A plane (ie, Ga plane) as a main surface. The GaN / sapphire substrate (U3) is a mirror-like substrate in which an epitaxial layer of a GaN layer is formed on the C plane ((0001) plane) of the sapphire substrate. This substrate equipped with an epitaxial layer is also called a template.

[0114] 2. Mask pattern (M)

[0115] On each of the three types of base substrates U1, U2, and U3, a 1μm thick SiO is formed by the plasma CVD (chemical vapor deposition) method 2 film. Through ph...

example 2

[0181] Example 2 (Difference caused by growth rate Vj)

[0182] Use the same reactor as in Example 1 and change the growth rate, as in Example 1, when equipped with SiO 2 On the GaAs (111) substrate (U2) of the strip type mask (M1) and the dot type mask (M2), gallium nitride crystals are grown. The relationship between the crystal growth rate Vj of the gallium nitride crystal and the ease of formation of the polarity inversion region J was examined.

[0183] In the HVPE reactor, the above-described substrate with a mask (two types of substrates, of which one type of base substrate U2 is equipped with two types of mask patterns M1 and M2) is placed. Initially, at a low temperature of about 500°C (Tb=500°C (773.15K)), the partial pressure of NH3 gas P NH3 =0.2atm(20kPa), and the partial pressure of HCl gas P HCl = 2×10 -3 Atm (0.2kPa) and a growth time of 15 minutes, a buffer layer of GaN is formed. The thickness of the buffer layer is 60 nm.

[0184] Subsequently, the temperature i...

example 3

[0225] Example 3 (The difference caused by the growth rate Vj at different growth temperatures)

[0226] The present inventors repeatedly conducted experiments as described in Examples 1 and 2, and found that the ease of formation of the polarity inversion region depends on the crystal growth temperature and the crystal growth rate at the crystal growth temperature. In the following example 3 and the following examples, the ease of formation of the polarity inversion region J is checked by the growth rate Vj at a growth temperature different from that of the example 2.

[0227] Using the same reactor as in Example 1, at a growth temperature different from that in Example 2, and changing the growth rate, the strip type mask (M1) and dot type mask (M1) equipped with SiO2 as in Examples 1 and 2 M2) GaAs (111) substrate (U2), grow gallium nitride crystal. The relationship between the crystal growth rate Vj of the gallium nitride crystal and the ease of formation of the polarity invers...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

A method of growing a gallium nitride crystal according to the present invention includes: a step of partially forming, on a ground substrate (U), a mask (M) inhibiting epitaxial growth of the crystal; and a step of epitaxially growing the crystal by vapor phase deposition on the ground substrate (U) on which the mask (M) is formed, wherein in the step of epitaxially growing the crystal, the crystal is grown under a first growth condition wherein a growth rate Vj expressed in [mu]m / h unit and a growth temperature T expressed in absolute temperature are expressed by (a 1 / T + b 1 ) C30B 25 / 04 C30B 29 / 40 C30B 29 / 38 H01L 21 / 205 8 51 3 2007 / 7 / 31 101144182 2008 / 3 / 19 000000000 Sumitomo Electric Industries Japan Hirota Ryu Motoki Kensaku Nakahata Seiji Okahisa Takuji Uematsu Koji mude jun huangqi hang 11219 Japan 2006 / 8 / 2 2006-210506

Description

Technical field [0001] Blue-violet lasers based on gallium nitride are used in next-generation high-capacity optical discs. In order for the blue-violet laser to achieve practical applications, high-quality gallium nitride substrates are required. In addition to blue-violet lasers, gallium nitride substrates are also expected to be used for: light emitting components, such as light emitting diodes, laser diodes, etc.; electronic components, such as rectifiers, bipolar transistors, field effect transistors, HEMT (High Electron Mobility Transistor) ), etc.; semiconductor sensors, such as temperature sensors, pressure sensors, radiation sensors, visible ultraviolet light detectors, etc.; SAW (surface acoustic wave) devices; acceleration sensors; MEMS (micro-electromechanical systems) components; piezoelectric vibrators; resonators; piezoelectrics Actuator, etc. The invention relates to a method for growing gallium nitride crystals for manufacturing high-quality gallium nitride substr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/04C30B29/40C30B29/38H01L21/205
CPCC30B29/406C30B25/183H01L21/20
Inventor 弘田龙元木健作中畑成二冈久拓司上松康二
Owner SUMITOMO ELECTRIC IND LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com