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A vertical outside cavity radiation semiconductor laser

A technology of semiconductors and lasers, applied in the field of vertical external cavity surface emitting semiconductor lasers, which can solve the problems of long debugging time and lack of mechanical and thermal stability of lasers, and achieve simple structure, good mechanical and thermal stability, and position adjustment simple effect

Inactive Publication Date: 2008-03-19
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When this kind of vertical external cavity surface emitting laser is used, the apex of the spherical reflector is required to be exactly on the optical path where the photons are located. Therefore, there must be multiple parts for adjusting the position of the spherical reflector on the mirror base of the fixed spherical reflector, and the adjustment needs to be very high. Accurate, long debugging time, and the laser does not have mechanical and thermal stability, it is difficult to be used in field working environments such as shock waves, vibrations and large temperature changes

Method used

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  • A vertical outside cavity radiation semiconductor laser

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Effect test

Embodiment 1

[0012] For the output light with a lasing wavelength of 980nm, the pump light source 1 is a high-power semiconductor laser array with a wavelength of 800-810nm, the Paul prism is made of BAK4 or BAK7, the antireflection film 3 is Ta205, the window layer 4 is InGaP or AlGaAs, and the light absorption Layer 5 is AlGaAs, periodic multi-quantum well active gain region 6 is In0.16Ga0.84As quantum well and Ga0.06As0.94P potential barrier, semiconductor distributed Bragg reflector 7 is 25-30 pairs of AlGaAs / GaAs, and the solder is indium , the heat sink 8 is diamond or Si, the heat sink 9 is copper or oxygen-free copper or pure copper, the heat-conducting adhesive is heat-conducting silicon, the microchannel heat sink 10 is copper or oxygen-free copper or Si material, and the output coupling mirror 12 is an optical Glass. In this way, a 980nm optically pumped vertical external-cavity surface-emitting semiconductor laser with a coupling cavity formed by a Paul prism can be obtained. ...

Embodiment 2

[0014] The pumping light source 1 among the embodiment 1 is replaced by a high-power 630-670nm semiconductor laser array, and the periodic multi-quantum well active gain region 6 is replaced by a GaAs quantum well and an A10.2Ga0.8As potential barrier, so that it can be obtained by The 850nm optically pumped vertical external-cavity surface-emitting semiconductor laser constituted by the Paul prism is coupled to the cavity.

Embodiment 3

[0016] The pumping light source 1 in embodiment 1 is replaced by a 975-1250nm high-power semiconductor laser array, the window layer 4 is replaced by InP, the periodic multi-quantum well active gain region 6 is replaced by InGaAsP / InP, and the semiconductor distributed Bragg reflector 7 Replace it with 25-30 pairs of InP / InGaAsP, so that a 1150nm optically pumped vertical external cavity surface emitting semiconductor laser with a coupling cavity formed by a Paul prism can be obtained.

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Abstract

The invention relates to a vertical outer cavity surface emitting semiconductor laser. The laser comprises a pumping light source, a heat radiator, a Bragg reflector, working material, an outer cavity mirror, and an output coupling mirror, wherein the outer cavity mirror is a Porro prism, the bottom surface of the Porro prism is oppositely parallel to the surface of the working material and the output coupling mirror. The bottom surface of the Porro prism, the working material and the Bragg reflector form a resonant cavity, and the output coupling mirror, the Porro prism, the working material and the Bragg reflector also form a resonant cavity. The Porro prism has simple position adjustment. The inventive laser has excellent mechanical and thermal stability, and can still stably operate in the fieldwork environment with shock wave, vibration and large temperature variation.

Description

technical field [0001] The invention relates to a semiconductor laser, in particular to a vertical external cavity surface emitting semiconductor laser. Background technique [0002] Vertical-cavity surface-emitting lasers are one of the most active research topics in the field of optoelectronics. Compared with edge-emitting semiconductor lasers, vertical-cavity surface-emitting lasers have smaller far-field divergence angles, circular light spots, and easy two-dimensional arrays, etc. advantages and has broad application prospects. Optically pumped vertical external cavity surface-emitting laser (OPS-VECSEL), as an emerging device in surface-emitting laser semiconductor laser technology, is widely used in laser display, laser communication, and material processing due to its high power, high-quality beam quality and easy two-dimensional array. , medical and national defense engineering and other fields have broad application prospects. In particular, its characteristics o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/183H01S5/14H01S3/08H01S5/04H01S3/0941
Inventor 何春凤秦莉宁永强李军王立军
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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