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Low-temperature co-fired cordierite series glass-ceramic substance power and preparation method thereof

A co-fired cordierite and ceramic substrate technology, applied in the field of low-temperature co-fired glass-ceramic substrate materials and its preparation, can solve the problems of unsatisfactory preparation and performance, insufficient microstructure, long sintering time, etc., to achieve The effect of large insulation resistance, low dielectric constant and small dielectric loss

Inactive Publication Date: 2010-06-16
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the preparation and performance of cordierite-based LTCC materials are still unsatisfactory, and there are some problems
In the research of Mg-Al-Si series glass-ceramics (Journal of Shandong University of Science and Technology, September 25 (3), 78-80 in 2006), Han Ye and others prepared Mg-Al-Si series glass-ceramics by solid-state sintering method. Although the bending strength of crystal glass is large enough, the sintering temperature is high, the sintering time is long, and the microstructure is not dense enough; the low-temperature sintering and properties of cordierite ceramic materials for high-frequency chip inductors (Rare Metal Materials and Engineering, 2005 In February 34 (2), 33-36), Wang Shaohong and others prepared cordierite-based LTCC materials by the sol-gel method. Although the sintering temperature was reduced to a certain extent, the sintering temperature was still between 900 and 1000 °C. time, which is unfavorable for the use of silver electrodes; literature MgO-Al 2 o 3 -SiO 2 -TiO 2 -CeO 2 Crystallization process and microwave dielectric properties of system glass-ceramics (Journal of Inorganic Materials, May 18 (3), 547-552), Wang Naigang et al. Although the dielectric loss is small, the dielectric constant is very high, between 8 and 11.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] The proportion of cordierite in the sample is 80% of the total mass, and the specific composition mass percentage is shown in Table 1 below. Weigh the corresponding chemical raw materials according to the formula, Al(NO 3 ) 3 9H 2 O and Mg(NO 3 ) 3 Dissolve in absolute ethanol, stir until transparent and clear, then Si(C 2 h 5 O) 4 , Ti(C 4 h 9 O) 4 Added to this solution, stirred until uniform and clear to obtain Liquid A. Filler H 3 BO 3 , Bi(NO 3 ) 3 ·5H 2 O, Ca(NO 3 ) 2 4H 2 O, Cu(NO 3 ) 2 ·3H 2 O was added to the mixture of absolute ethanol and deionized water, stirred evenly, and the pH value was adjusted to 9.23 with ammonia water to obtain liquid B. Mix liquids A and B, stir evenly, and obtain a sol. Put the sol in an oven at 40°C and let it stand for sol-gel transformation to obtain a gel. Dry the gel completely at 80°C, take it out and grind it into a fine powder, put it in a muffle furnace at 250°C for debinding for 3 hours, heat up to ...

Embodiment 2

[0031] The proportion of cordierite in the sample is 85% of the total mass, and the specific composition mass percentage is shown in Table 2 below. Weigh the corresponding chemical raw materials according to the formula, Al(NO 3 ) 3 9H 2 O and Mg(NO 3 ) 3 Dissolve in absolute ethanol, stir until transparent and clear, then Si(C 2 h 5 O) 4 , Ti(C 4 h 9 O) 4 Added to this solution, stirred until uniform and clear to obtain Liquid A. Filler H 3 BO 3 , Bi(NO 3 ) 3 ·5H 2 O, Ca(NO 3 ) 2 4H 2 O, Cu(NO 3 ) 2 ·3H 2 O was added to the mixture of absolute ethanol and deionized water, stirred evenly, and the pH value was adjusted to 9.45 with ammonia water to obtain liquid B. Mix liquids A and B, stir evenly, and obtain a sol. Put the sol in an oven at 50°C and let it stand for sol-gel transformation to obtain a gel. Dry the gel completely at 100°C, take it out and grind it into a fine powder, put it in a muffle furnace at 250°C for 1 hour, heat up to 750°C for 2 ho...

Embodiment 3

[0037] The proportion of cordierite in the sample is 90% of the total mass, and the specific composition mass percentage is shown in Table 3 below. Weigh the corresponding chemical raw materials according to the formula, Al(NO 3 ) 3 9H 2 O and Mg(NO 3 ) 3 Dissolve in absolute ethanol, stir until transparent and clear, then Ti(OC 4 h 9 ) 4 and Si(C 2 h 5 O) 4 Add to this solution and stir well to form a clear solution A. will fill H 3 BO 3 , Bi(NO 3 ) 3 ·5H 2 O, Ca(NO 3 ) 2 4H 2 O. KNO 3 , Cu(NO 3 ) 2 ·3H 2 O was added to the mixture of absolute ethanol and deionized water, stirred evenly, and the pH value was adjusted to 9.43 with ammonia water to obtain liquid B. Mix solutions A and B and stir evenly to obtain a sol. Put the sol in an oven at 60°C and let it stand still, so that it undergoes sol-gel transformation to obtain a gel. Dry the gel completely at 120°C, take it out and grind it into a fine powder, put it in a muffle furnace at 200°C for 2 hou...

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PUM

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Abstract

The present invention discloses low temperature co-baked MgO-Al2O3-SiO2 glass-ceramic wafer powder and its preparation process. The co-baked MgO-Al2O3-SiO2 glass-ceramic wafer powder is prepared basedon the recipe of cordierite 2MgO.2Al2O3.5SiO2 and through adding baking assistant B2O3 and Bi2O3, and modifiers TiO2, CuO, CaO and / or K2O to improve the crystal chemistry performance. It is preparedthrough a sol-gel synthesis process with roasting temperature of 700-750 deg.c and sintering temperature of 850-900 deg.c. The low temperature co-baked MgO-Al2O3-SiO2 glass-ceramic wafer powder has low sintering temperature, low dielectric constant, low dielectric loss, high insulation resistance, simple preparation process and other advantages. It is applied in making low temperature co-baked wafer.

Description

technical field [0001] The invention belongs to the field of electronic ceramic substrates and the manufacture thereof, in particular to a low-temperature co-fired glass-ceramic substrate material and a preparation method thereof. Background technique [0002] The electronic substrate is the carrier of the semiconductor chip package, carrying the support of electronic components and forming the base of the electronic circuit. Traditional inorganic substrates use Al 2 o 3 , SiC, BeO, and AlN are used as substrates, which have excellent properties in terms of thermal conductivity, flexural strength, and thermal expansion coefficient. The choice of refractory metals such as W or Mo has greatly increased the cost, and the emergence of low temperature co-fired ceramic (LTCC) materials has opened up a new way out for this. [0003] The co-firing temperature of the LTCC system is generally between 800 and 900 °C. Therefore, metals with lower melting points such as Cu and Ag can...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C03C10/14C03C3/091
Inventor 纪箴张昭瑞王燕斌肖治纲
Owner UNIV OF SCI & TECH BEIJING
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