Chemical mechanical polishing solution for polishing low dielectric materials
A low-dielectric material and chemical-mechanical technology, applied to polishing compositions containing abrasives, circuits, electrical components, etc., can solve the problems of low removal rate of low-dielectric materials and difficult control of polishing selection, and achieve high removal rate Effect
Inactive Publication Date: 2008-04-02
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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Problems solved by technology
[0004] The purpose of the present invention is to provide a novel chemical mechanical polishing solution for low dielectric materials in order to solve the problems that the removal rate of low dielectric materials is relatively low and the polishing selection is difficult to control under lower pressure
Method used
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Examples
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Embodiment 1
[0021] Example 1 1% CeO 2 (particle size is 30nm), 0.001% 1-phenyl-5-mercapto-tetrazolium, 0.2% diammonium hydrogen phosphate, 0.001% carbamide peroxide, water as the balance, pH=2.
Embodiment 2
[0022] Example 2 2% Al 2 o 3 (particle size is 20nm), 0.01% 2-mercapto-benzothiazole, 0.2% pyrophosphoric acid, 0.05% peracetic acid, 0.02% polyacrylic acid (molecular weight is 3000), water is the balance, pH=3.
Embodiment 3
[0023] Example 3 10%TiO 2 (particle size is 150nm), 0.2% benzimidazole, 0.2% polyphosphoric acid, 0.5% potassium persulfate, 0.02% polyethylene glycol 200 (molecular weight is 200), water is the balance, pH=4.
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Abstract
The invention discloses chemical mechanical polishing liquid for polishing low-k dielectric materials, which comprises abrasive particles, corrosion inhibitor, oxidizer and water, and is characterized in comprising at least an accelerator agent. The polishing liquid of the invention has a high removing speed of low k dielectric material under lower pressure, and also has the a high removing speed of the other materials such as copper metal (Cu), silicon oxide (Teos), Tantalum metal (Ta) / Tantalum nitride (TaN) blocking layers, etc.
Description
technical field [0001] The invention relates to a chemical mechanical polishing fluid, in particular to a chemical mechanical polishing fluid for polishing low dielectric materials. Background technique [0002] Due to the high dielectric constant of traditional dielectric layer materials (such as TEOS), the capacitance between the conductive layers will increase, which will affect the speed of the integrated circuit and reduce the efficiency. With the complexity and refinement of the integrated circuit, This kind of substrate material is increasingly unable to meet the technical requirements of more advanced processes (65nm or 45nm). The introduction of low dielectric materials (such as CDO, SOG) into the substrate is an inevitable trend in the development of integrated circuit technology, and many applications are produced. Polishing slurries for low dielectric materials. [0003] However, none of the low-dielectric material polishing fluids in the prior art has achieved ...
Claims
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Patent Timeline
Login to View More IPC IPC(8): C09G1/02H01L21/304
CPCC09G1/02
Inventor 荆建芬宋伟红陈国栋姚颖
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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