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Polishing slurry and polishing material using same

An abrasive material and amide-based technology, which is applied in the field of abrasive materials and abrasive slurry to achieve the effect of inhibiting damage

Inactive Publication Date: 2008-04-02
MITSUI CHEM INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0021] However, even with these techniques, there is room for improvement in suppressing damage to the underlying substrate while ensuring good grinding rates

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0185] Hereinafter, the present invention will be specifically described by way of examples, but the present invention is not limited to these examples.

[0186] Here, parts and % in the examples represent parts by weight and % by weight unless otherwise specified.

[0187] In addition, the molecular weights of the amide group-containing water-soluble copolymer resins (A) obtained in the following examples are all in the range of 5,000 to 500,000.

[0188] The evaluation of the abrasive using the abrasive slurry was performed by the following method.

[0189] 1. Grinding speed

[0190] Abrasive material: containing the abrasive material slurry in the examples and comparative examples

[0191] Object to be polished: 5000 angstroms of thermal oxide film laminated on silicon wafer substrate / 300 angstroms of Ta film formed by sputtering / 1500 angstroms of copper seed film for plating formed by CVD method / formed by plating method 15,000 angstrom copper film on an 8-inch silicon w...

manufacture example 1

[0214] After adding 200 parts by weight of distilled water to a separable flask equipped with a stirrer and a reflux cooling device, and replacing it with nitrogen, the temperature was raised to 80°C. Next, after adding 2.0 parts of ammonium persulfate, a mixture of vinyl monomer and water having the following composition was continuously added over 2 hours while stirring, and then aged at the same temperature for 2 hours to complete the polymerization. An aqueous solution of an amide group-containing water-soluble resin (A-1) having a solid content of 20.0% was obtained.

[0215] 65.0 parts of methacrylamide

[0216] 10.0 parts of methacrylic acid

[0217] 20.0 parts of 2-hydroxyethyl methacrylate

[0218] Methyl acrylate 5.0 parts

[0219] Distilled water 200.0 parts

[0220] The molecular weight of the obtained amide group-containing water-soluble resin (A-1) was measured by the GPC-MALLS method based on product name: PULLULAN (manufactured by Shodex Corporation), and t...

Embodiment 1

[0222] After adding 360 parts by weight of distilled water to a separable flask equipped with a stirrer and a reflux cooling device, and replacing it with nitrogen, the temperature was raised to 80°C. Next, after adding 2.0 parts of ammonium persulfate, a vinyl monomer emulsion having the following composition was continuously added over 3 hours, and then kept for 3 hours to complete the polymerization. Organic particles (B-1) which are copolymer resins having a solid content of 20.0% were obtained. The obtained organic particles (B-1) had a particle diameter of 154 nm. Here, in the present example and the following examples, unless otherwise specified, the particle diameter of the organic particles (B) was determined by the dynamic light scattering method, and the number average particle diameter was taken as the particle diameter.

[0223] The amide group-containing water-soluble resin (A-1), which is the previously obtained copolymer resin, was mixed therein at a ratio of ...

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Abstract

Disclosed is a polishing slurry which enables to suppress damages to the foundation while securing an adequate polishing rate. The polishing slurry contains a resin (A) having an amide group and an organic resin (B).

Description

technical field [0001] The present invention relates to an abrasive slurry and an abrasive using the same, and particularly relates to an abrasive slurry for polishing the surface of an insulating film or metal wiring such as tungsten, aluminum, or copper in a wiring formation process for semiconductor device manufacturing. Background technique [0002] As for the polishing technology, a technology capable of suppressing damage to the underlayer while ensuring a good polishing rate is being sought. [0003] For example, in recent years, in the wiring formation process of semiconductor device manufacturing, a trench for wiring formation is formed on an insulating film, a metal film for wiring is embedded by a plating method, etc., an excess metal film is removed, and a metal-containing Chemical Mechanical Polishing (CMP) is used as such a technique for planarizing the insulating film of the wiring. It is a method of mechanically polishing a chemically modified polishing surf...

Claims

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Application Information

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IPC IPC(8): H01L21/304C09K3/14B24B37/00
Inventor 江藤彰纪大池节子石塚友和藤井重治进藤清孝
Owner MITSUI CHEM INC
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