Whole-wet photoresist removing method

An all-wet and wet-process technology, which is applied in the manufacture of electrical components, semiconductor/solid-state devices, circuits, etc., can solve the problems of increased liquid loss, wafer surface oxidation, and structural disorder, so as to reduce manufacturing time and avoid Effects of ashing damage and productivity improvement

Inactive Publication Date: 2008-04-30
SHANGHAI HUA HONG NEC ELECTRONICS
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, due to the oxidation and structural disorder of the wafer surface caused by the ashing process, the loss of the chemical solution is increased

Method used

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  • Whole-wet photoresist removing method
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Embodiment Construction

[0017] In one embodiment, the degumming method of the present invention comprises the following steps:

[0018] First, if figure 1 As shown, a number of silicon wafers are immersed in a wet chemical solution tank, the chemical solution tank is open, and the chemical solution contained therein is sulfuric acid (H 2 SO 4 ) and hydrogen peroxide (H 2 o 2 ) mixture; usually, the temperature of the liquid medicine is 150±10°C.

[0019] Then, if figure 2 As shown in Fig. 1, cover and seal the wet chemical solution tank, and heat the chemical solution at a temperature range of 180-240°C. When the temperature of the mixed chemical solution is 200±10°C, the degumming effect is the best. good.

[0020] After degumming, if the airtight tank is directly opened under high temperature environment, the depressurized hydrogen peroxide will volatilize rapidly, resulting in a rapid change in the ratio of sulfuric acid and hydrogen peroxide mixed solution.

[0021] Therefore, after the m...

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Abstract

The invention discloses an all-wet degumming method, and includes the following steps: a plurality of silicon chips are dipped into an open wet liquor tank at one time, wherein, the liquor in the liquor tank is a mixture of sulphuric acid and oxyful. The wet liquor tank is capped and sealed up, and the liquor is heated to a temperature between 180 to 240 degrees Celsius system. When the silicon chips are degummed, the temperature of the liquor in the sealed wet liquor tank is reduced. The method realizes an all-wet incineration-free degumming; thereby, the incinerated damage is avoided, the consumption of the liquor is reduced, and the cost is saved. In addition, the method reduces the time of manufacturing an integrated circuit integrally, improves the productivity, lowers the capital investment and achieves an excellent degumming effect.

Description

technical field [0001] The invention relates to a glue-removing method in the semiconductor manufacturing industry, in particular to an all-wet glue-removing method in the semiconductor manufacturing industry. Background technique [0002] In the manufacture of integrated circuits (ICs), the step of removing photoresist for masks needs to be repeated many times, so a clean and efficient removal process is very important. Sulfuric acid (H 2 SO 4 ) and hydrogen peroxide (H 2 o 2 ) mixture can be used to remove photoresist that has not been implanted or implanted in small doses. Likewise, an ashing process is often used in the stripping process, in which the substrate is heated while the photoresist is exposed to oxygen plasma or ozone. However, standard sulfuric acid (H 2 SO 4 ) and hydrogen peroxide (H 2 o 2 ) mixtures and ashing processes are limited in what they can do. [0003] Therefore, for high-dose ion implantation, that is, the ion implantation amount is gre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/42H01L21/00H01L21/027H01L21/311
Inventor 刘金秋徐云张擎雪
Owner SHANGHAI HUA HONG NEC ELECTRONICS
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