Mask etch process

Abstract

The present invention provides method and apparatus for etching a metal layer disposed on a substrate, such as a photolithographic reticle, are provided. In one aspect, a method is provided for processing a substrate including positioning a substrate having a metal photomask layer disposed on a optically transparent material in a processing chamber, introducing a processing gas processing gas comprising an oxygen containing gas, a chlorine containing gas, at least one of trifluoromethane (CHF 3 ), sulfur hexafluoride (SF 6 ), hexafluoroethane (C 2 F 6 ) or ammonia (NH 3 ) and optionally a chlorine-free halogen containing gas and / or an inert gas, into the processing chamber, generating a plasma of the processing gas in the processing chamber, and etching exposed portions of the metal layer disposed on the substrate.

Description

technical field [0001] The present invention relates to the manufacture of integrated circuits and the manufacture of photolithographic reticles for use in the manufacture of integrated circuits. Background technique [0002] Semiconductor device geometries have decreased dramatically in size since semiconductor devices first emerged decades ago. Since then, integrated circuits have generally followed the two-year / half-size law (commonly known as Moore's Law), which means that the number of devices on a chip doubles every two years. Contemporary fabs routinely produce devices with 0.15 μm and even 0.13 μm feature sizes, while future fabs will soon be producing devices with even smaller geometries. [0003] Ever-increasing circuit densities have placed greater demands on the processes used to fabricate semiconductor devices. For example, as circuit density increases, the width of vias, contacts, and other features, and the dielectric material between them, decreases to subm...

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Problems solved by technology

delivering power to the processing chamber to form a plasma from the processing gas

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