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Process for ashing organic materials from substrates

A technology of organic substances and substrates, applied in chemical instruments and methods, optomechanical equipment, surface etching compositions, etc.

Inactive Publication Date: 2001-03-28
安农股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in this case CF 4 Also causes etching of substrate layers such as silicon oxide, polysilicon and aluminum due to fluorine reaction

Method used

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no. 2 approach

[0024] Another embodiment of the present invention is a plasma ashing process carried out using any of conventional flooded, barrel, once-through and co-current and other types of ashing devices. In a second embodiment, the plasma is generated using a second set of gases. Specifically, the reaction gas contains sulfur trioxide and an auxiliary gas. Sulfur trioxide and auxiliary gases are fed into the plasma formation chamber, which has been evacuated and maintained at a suitable vacuum. The concentration of sulfur trioxide in the second group of reaction gases is in the range of about 1-95% by volume, and the auxiliary gas accounts for the rest (99-5% by volume).

[0025] The flow of each gas is controlled with a controller in the process. Microwave energy is fed into a plasma-forming chamber, where plasma is generated from reactive gases. The active species generated as a plasma flows downward into the processing chamber and is brought into contact with the organic film on...

no. 3 approach

[0027] Another embodiment of the present invention is a plasma ashing process carried out using any of conventional flooded, barrel, once-through and downstream, as well as other types of ashing devices. A third group of gases is used to generate the plasma in the third embodiment. Specifically, the reaction gas contains sulfur trioxide and at least two auxiliary gases. Sulfur trioxide and auxiliary gases are fed into the plasma formation chamber, which has been evacuated and maintained at a suitable vacuum. The concentration of sulfur trioxide in the third group of reaction gases is in the range of about 1-95% (volume), and the auxiliary gas makes up the balance (99-5% (volume)).

[0028] The flow of gas is controlled by a controller during the process. Microwave energy is sent into a plasma formation chamber, where the plasma is generated from the reactive gases. The active species generated as a plasma flows downward into the processing chamber and is brought into contac...

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PUM

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Abstract

Ashing of an organic film from a substrate is carried out by providing a plasma comprising a gas or gas mixture selected from the following groups: (a) sulfur trioxide alone; (b) sulfur trioxide plus one supplemental gas; and (c) sulfur trioxide plus at least two supplemental gases. Any of the following gases may be employed as the supplemental gas: water vapor, ozone, hydrogen, nitrogen, nitrogen oxides, or a halogenide such as tetrafluoromethane, chlorine, nitrogen trifluoride, hexafluoroethane, or methyltrifluoride.

Description

Background of the Invention [0001] 1. Field of Invention [0002] In general, the present invention relates to the removal of organic substances on various substrates, and more particularly, to a method for the removal of organic substances temporarily in various types of devices during the production of semiconductors, flat panel displays, read / write heads and other related devices. Ashing method of organic films and substances formed on substrate layers. [0003] 2. Description of Related Art [0004] The removal of photoresist films is an important part of the process of fabricating semiconductor devices. A method of removing organic films such as resists and polyimides using an ashing method, specifically, a gas having a high oxygen content has been known for some time. Advances in plasma devices and related processing technologies over the last decade have enabled successive generations of Very Large Scale Integration (VLSI) devices and Ultra Large Scale Integration ...

Claims

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Application Information

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IPC IPC(8): G03F7/42H01L21/302H01L21/3065H01L21/311H05K3/26
CPCH01L21/31138G03F7/427H05K3/26H01L21/302
Inventor E·O·莱文松A·瓦莱
Owner 安农股份有限公司
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