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Semiconductor module, method for manufacturing semiconductor modules and mobile device

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as different thermal expansion coefficients, improve yield, improve connection reliability, and reduce manufacturing costs Effect

Inactive Publication Date: 2008-06-11
SANYO ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, unlike the case of connections in flexible substrates and printed circuit boards, in the case of semiconductor modules, there is a large difference in thermal expansion coefficient between metal plates such as silicon and copper constituting the semiconductor element

Method used

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  • Semiconductor module, method for manufacturing semiconductor modules and mobile device
  • Semiconductor module, method for manufacturing semiconductor modules and mobile device
  • Semiconductor module, method for manufacturing semiconductor modules and mobile device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] FIG. 1 is a schematic sectional view of a semiconductor module according to Embodiment 1 of the present invention. 2 is an enlarged cross-sectional view of an electrode portion (the cross-sectional portion indicated by X in FIG. 1 ) of the semiconductor module shown in FIG. 1 . A semiconductor module according to Embodiment 1 will be described with reference to FIGS. 1 and 2 .

[0041] The semiconductor substrate 1 adopts a P-type silicon substrate or the like, on the surface S1 (lower side) of the surface S1 (lower side), a semiconductor element 2 such as a predetermined electrical circuit is formed, and on the surface S1 (especially the peripheral part) that becomes the mounting surface, the semiconductor element 2 is formed. Electrode 2a. A protective film 3 is formed in a region on the surface of the semiconductor substrate 1 from which this electrode 2 a is removed. On the surface S1 of the semiconductor substrate 1, in order to further expand the pitch of the el...

Embodiment 2

[0074] 9 is a schematic cross-sectional view illustrating a semiconductor module according to Embodiment 2 of the present invention. FIG. 10 is an enlarged cross-sectional view of an electrode portion (cross-sectional portion indicated by X in FIG. 9 ) of the semiconductor module shown in FIG. 9 . The difference from Example 1 is the shape of the protrusion 4a (the protrusion 4a including the plastic region 4c) after crimping, that is, when the plastic region 4c is plastically deformed, it also faces along the contact surface with the electrode 2a. The deformation expands in the lateral direction, and the shape of the tip of the protrusion 4a becomes a reverse truncated cone structure. The reverse frustum structure here refers to a state in which the diameter of the projection is at least larger in the plastic region than in the vicinity of the plastic region.

[0075] The protrusion 4a having such a plastic region 4c can be easily produced by, for example, increasing the pre...

Embodiment 3

[0080] In the first embodiment described above, although the plastic region 4b was formed on the protruding portion 4a by the RTA method, the plastic region 4d may also be formed according to this embodiment. Next, the method of forming the plastic region 4d in this embodiment will be described.

[0081] 11 is a cross-sectional view illustrating a method of forming a copper plate having a protrusion including a plastic region according to Example 3 of the present invention.

[0082] First, as shown in FIG. 11(A), a copper plate 4z having a thickness greater than at least the sum of the height of the protrusion 4a and the thickness of the rewiring pattern 4 is prepared.

[0083] As shown in FIG. 11(B), photolithography is used to selectively form a resist mask (not shown) in the region where the protrusion is formed, and etching is performed using the resist mask as a mask. 4z forms the protrusion part 4a of a predetermined pattern.

[0084] As shown in FIG. 11(C), a resist i...

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Abstract

Connection reliability in electrode portions of a semiconductor module is improved. A semiconductor wafer is prepared where a plurality of semiconductor substrates each having an electrode and a protective film at the surface is formed in a matrix shape. Next, at the surface of the semiconductor wafer (semiconductor substrate) a insulation layer is held between the semiconductor substrate and a copper sheet (metal sheet) formed integrally with a bump containing a plastic region on a tip part. With the insulating held between them, the semiconductor substrate, the insulating layer and the copper sheet are press-formed by a press machine into a single block. The bump penetrates the insulating layer, and the plastic region on the tip part is plastic deformed at a contact surface with an electrode, so that the bump and the electrode are electrically connected together.

Description

technical field [0001] The invention relates to a semiconductor module, a manufacturing method of the semiconductor module and a portable device. Background technique [0002] Conventional semiconductor modules have a structure called CSP (Chip Size Package: Chip Size Package). A CSP-based semiconductor module is formed by dicing and singulating a semiconductor wafer (semiconductor substrate) in which LSIs (semiconductor elements) and external connection electrodes connected thereto are formed on one main surface. Therefore, the semiconductor module can be fixed on the wiring board with the same size as the LSI chip, and the wiring board on the side where the semiconductor module is mounted can be miniaturized. [0003] In recent years, along with miniaturization and higher functionality of electronic equipment, semiconductor modules used in electronic equipment have been required to be further miniaturized. With the miniaturization of such a semiconductor module, narrowin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/48H01L21/60
CPCH01L2924/01015H01L2224/0231H01L2924/01082H01L24/94H01L2224/02333H01L2924/01002H01L2224/116H01L23/3128H01L2924/15311H01L23/49816H01L2924/01029H01L2224/13099H01L2224/02319H01L2924/01027H01L24/11H01L2924/014H01L2924/01013H01L2224/274H01L2924/01047H01L2924/01079H01L2924/01005H01L2924/01033H01L2924/01006H01L2924/01078H01L2924/01011H01L2224/114H01L2924/01075H01L2224/02377H01L2224/0401H01L2224/05124H01L2224/05144H01L2224/05147H01L2224/05647H01L2924/351H01L2924/00H01L2924/00014
Inventor 冈山芳央臼井良辅井上恭典
Owner SANYO ELECTRIC CO LTD