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Method for producing quantum dot silicate thin film for light emitting device

A silicic acid and quantum dot technology, applied in laser parts, chemical instruments and methods, nanotechnology for information processing, etc., can solve the problems of thin film application limitation, inability to increase quantum dot concentration, quantum dot thermal stability, etc.

Active Publication Date: 2008-06-18
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this simple mixing of QDs and organic polymers cannot increase the concentration of QDs and improve the thermal stability of QDs.
Therefore, the application of thin films derived from quantum dots in various devices is limited

Method used

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  • Method for producing quantum dot silicate thin film for light emitting device
  • Method for producing quantum dot silicate thin film for light emitting device
  • Method for producing quantum dot silicate thin film for light emitting device

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0096] Preparation of Quantum Dot Films

[0097] Since the reactive groups for the sol-gel operation are distributed at the ends of the quantum dots, siloxane bonds can be formed between the quantum dots through the sol-gel operation under acidic or alkaline conditions.

[0098] In order to prepare quantum dot films, quantum dots are dispersed in a solvent capable of sol-gel operation. Acid or base catalysts are added to the dispersion for sol-gel operation. When the reaction mixture has increased viscosity, it is coated onto a substrate. Finally, the coated substrate is heat-treated to prepare a quantum dot film. Alternatively, after the reactive groups for the sol-gel operation have been coordinated to the quantum dots and the quantum dots are coated onto the substrate, they can be sol-gel operated on the substrate by treatment with acid or base, And heat treatment to prepare quantum dot film.

[0099] The structure of the quantum dot film thus prepared is shown in Fig. ...

Embodiment 1

[0134] Embodiment 1: Synthesis of cadmium sulfide quantum dots emitting yellow light

[0135] 2.5 ml of trioctylamine as a solvent was added to a 25 ml flask equipped with a reflux condenser, and the temperature of the flask was adjusted to 180°C while stirring. A solution of 50 mg of cadmium dithio diethyl carbamate in 0.9 ml of trioctylphosphine was rapidly injected into the flask. After 10 minutes, a solution of 20 mg of zinc dithiodiethylcarbamate in 0.3 ml of trioctylphosphine was slowly added dropwise. Five minutes after the addition of the zinc dithiodiethylcarbamate was complete, the temperature of the reactor was cooled and ethanol was added to quench the reaction. Quantum dots were obtained from the obtained mixture by centrifugation and dispersed in toluene. Photoluminescence spectroscopy confirmed that the compound semiconductor quantum dots emitted light at 536nm.

Embodiment 2

[0136] Embodiment 2: Synthesis of cadmium sulfide quantum dots emitting blue light

[0137] This operation was carried out in the same manner as in Example 1, except that after the rapid injection of the solution of cadmium carbamate in trioctylphosphine, the reaction was maintained for about 7 minutes. Quantum dots were obtained from the obtained mixture by centrifugation and dispersed in toluene. Photoluminescence spectroscopy confirmed that the compound semiconductor quantum dots emitted blue light at 470nm.

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Abstract

A method for producing a quantum dot silicate thin film for light emitting devices. The quantum dot silicate thin film is produced by introducing a silane compound having a functional group capable of interacting with a quantum dot and at least one reactive group for a sol-gel process into the surface of the quantum dot or a matrix material for dispersing the quantum dot, thereby exhibiting excellent mechanical and thermal stability.

Description

[0001] This application is a divisional application of the Chinese invention application (name of invention: method for preparing quantum dot silicic acid film for light-emitting devices, filing date: June 28, 2004; application number 200410062068.9). [0002] This non-provisional application claims priority under 35 U.S.C. §119(a) to Korean Patent Application No. 2003-42448 filed on June 27, 2003, the contents of which are hereby incorporated by reference. technical field [0003] The present invention relates to a method for preparing a quantum dot silicate (quantum dot silicate) thin film for a light emitting device (light emitting device), and more particularly relates to a method for introducing a silane compound into a quantum dot or for dispersing a quantum dot The surface of the host material, and the method for preparing the quantum dot silicic acid thin film used in the light-emitting device, the light-emitting device has excellent mechanical properties and thermal st...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/00H01L33/00C09K11/08B82B3/00C08G77/22C09K11/56C09K11/88C09K11/89G01N33/53H01L21/00H01L21/20H01L21/368H01L29/06H01L33/06H01L33/28H01L33/44H01S5/00
CPCB82Y10/00Y10S438/962B82Y5/00C09K11/565B82Y20/00B82Y30/00H01L21/20
Inventor 林珍亨张银珠安泰琼
Owner SAMSUNG ELECTRONICS CO LTD
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