CMOS-device and manufacture method of the cmos device

Abstract

The invention provides a method for manufacturing a CMOS device, the method comprising: sequentially forming a first silicon oxide film and a first polysilicon film on an underlying substrate; performing an ion implantation process on the first polysilicon film Forming a plurality of lower layer conductors spaced apart from each other according to predetermined intervals; forming a plurality of N-type semiconductor thin films and P type semiconductor thin films spaced apart from each other and contacting the lower layer conductors according to predetermined intervals; A plurality of upper conductors electrically connected to the P-type semiconductor film and the P-type semiconductor film; an upper substrate is formed on the upper conductor; a second polysilicon film is formed on the upper substrate; a second polysilicon film is formed on the second polysilicon film Form a device isolation film and a photodiode in the second polysilicon film; form a device isolation film and a photodiode in the second polysilicon film; form a gate electrode containing insulating sidewalls above the second polysilicon film; forming an insulating film over the epitaxial layer; forming a color filter array over the insulating film; forming a planarization layer over the color filter array; and forming a microlens over the planarization layer.

Description

[0001] This application claims priority from Korean Patent Application No. 10-2006-0137322 filed on December 29, 2006, the entire contents of which are hereby incorporated by reference. technical field [0002] The invention relates to a CMOS device and a manufacturing method of the device, more specifically, the invention relates to a CMOS device capable of preventing dark current from being generated due to temperature rise of the CMOS device and a manufacturing method of the device. Background technique [0003] Image sensors are semiconductor devices used to convert light images detected by the image sensors into electrical signals. Image sensors can be classified into Charge Coupled Devices (CCD) and Complementary Metal Oxide Semiconductors (CMOS). [0004] CCD image sensors use a plurality of metal-oxide-silicon (MOS) capacitors arranged next to each other, and charge carriers are stored therein and transferred to the capacitors. [0005] A CMOS image sensor has a plu...

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Problems solved by technology

[0006] CCD and MOS image sensors suffer from dark current due to increased thermal spreading during operation

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