Multi-component metal oxide semiconductor mesoporous material and synthesizing method thereof

A mesoporous and powder technology, which is applied in the synthesis of multi-component metal oxide semiconductor mesoporous materials, can solve the problems of small specific surface area, poor crystallinity, harsh synthesis conditions, etc., and achieves simple methods, improved thermal stability, and protection The effect of not collapsing

Inactive Publication Date: 2012-12-05
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

So far, there is no general applicable method for the synthesis of most multinary metal oxide semiconductor mesoporous materials. Only a few special multinary metal oxide mesoporous materials have been synthesized, and the synthesis conditions are harsh, and the obtained samples have small specific surface area and crystallization. degree difference

Method used

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  • Multi-component metal oxide semiconductor mesoporous material and synthesizing method thereof
  • Multi-component metal oxide semiconductor mesoporous material and synthesizing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] Dissolve 0.004mol SrCO3 in 20ml glacial acetic acid, add 5ml H 2 O, accelerated dissolution in ultrasound to obtain a clear liquid, 0.65gP123 was added to the mixed solution, stirred for 20min, 0.004mol titanium isopropoxide was slowly added dropwise to the mixed solution, stirred for 3 hours, and the obtained clear solution was incubated Put it in a 40°C oven for 3 days in the dish, take it out and scrape off the dry gel. The obtained xerogel was calcined at 500 °C in air for 5 hours to obtain the multinary metal oxide semiconductor mesoporous SrTiO 3 powder.

Embodiment 2

[0054] 2.95g SrCO 3 Add to 60ml glacial acetic acid, add 10ml H 2 O. Heating and stirring overnight gave a clear solution. Add 0.02 mol tetrabutyl titanate to 16 g ethanol and stir for 5 hours to obtain a clear solution. The latter solution was added to the previous solution and stirred vigorously for one hour, then 2 g of surfactant (P123) was added to the solution and stirred for 2 hours to obtain a clear solution. Pour the clear solution into a petri dish, put it in an oven at 40°C, and age it for 60 hours, then scrape off the xerogel, and bake the obtained xerogel in air at 550°C for 5 hours. Obtained mesoporous SrTiO 3 powder.

Embodiment 3

[0056] 8g of citric acid was added to 10g of water, stirred to obtain a clear solution, and 5ml of ethanol was added. 2.95gSrCO 3 Added to the above solution, stirred for 5 hours until clear. Add 0.02mol titanium isopropoxide and stir for 1 hour until completely clear. To the resulting solution was added 2 g of surfactant (P123) and stirred for 2 hours to obtain a clear solution. Pour the clear solution into a petri dish, put it in an oven at 40°C, and age it for 60 hours, then scrape off the xerogel, and bake the obtained xerogel in air at 550°C for 5 hours. Obtained mesoporous SrTiO 3 powder.

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Abstract

The invention relates to a semiconductor meso pore material of multivariate metal oxide, which has a general formula of AxByOz, wherein, A is equal to Ca, Sr, Ba, Na, K, La, Fe, Ni, Zn, Al, Si and so on, and B is equal to Ti, Ta, W, Fe, Co, Al, Si, In, Bi and so on; the condition that A is equal to Si while B is equal to Al is not included; specific surface area of the meso pore material is 10 to1,000 m2g-1; a pore wall of the meso pore is in a crystal state and adjustable aperture is between 2 nm to 50 nm; a pore channel shapes like a worm, cubic phase and hexagonal phase and so on. The material is synthesized through the following steps: 1) inorganic metal salt solution is prepared; 2) metal alkoxide salt solution is prepared; 3) the two solutions are mixed and stirred to obtain transparent or translucent solution; 4) certain amount of embedded segment surfactant is added into the solution and then the mixture is stirred until clarified; 5) the solution with the surfactant which isobtained in the step 4) is parched to obtain xerogel; 6) the xerogel is thermally processed; 7) the obtained xerogel is roasted; 8) impurities of the roasted sample are removed in acid or alkali solution and then the aperture is regulated.

Description

technical field [0001] The invention relates to a method for synthesizing a mesoporous (mesoporous) material, in particular to a method for synthesizing a multi-element metal oxide semiconductor mesoporous material. technical background [0002] Multi-element metal oxide materials are oxide materials composed of two or more metal elements. Because of its unique physical and chemical characteristics, it has ferroelectric, ferromagnetic, piezoelectric, dielectric and other semiconductor properties, and is widely used in electronics, catalysis, photoelectric conversion, environmental purification, fuel cells and other industries. Due to the mesoporous channel structure of the mesoporous multi-element metal oxide material, some functions of the original material can be improved. In 1992, M41S series ordered mesoporous SiO was synthesized by template method 2 The research work of the material was reported for the first time, and since then the mesoporous structure of various no...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B38/04
Inventor 邹志刚范晓星刘礼飞陈新益
Owner NANJING UNIV
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