Method for cleaning ceramic parts surface in polysilicon etching cavity

A technology of ceramic material and etching cavity, which is applied in the cleaning method using tools, cleaning method using liquid, cleaning method and utensils, etc., which can solve the time-consuming and labor-intensive cleaning process, the surface of parts that are easily damaged, and the cleaning effect of polymers. Not ideal and other problems, to achieve the effect of ideal cleaning effect and simple and convenient steps

Active Publication Date: 2008-07-23
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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Problems solved by technology

ESC has been sprayed), this method is not only time-consuming and labor-intensive to remove the pol...

Method used

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Embodiment Construction

[0031] The core of the method for cleaning the surface of ceramic material parts in a polysilicon etching chamber of the present invention is to clean the surface of the parts with an organic solvent; then clean the surfaces of the parts with an alkaline solution and an acidic solution in sequence in no particular order; , Put the parts in the ultrasonic tank, clean the set ultrasonic cleaning time, and perform ultrasonic cleaning of the parts. To achieve the purpose of removing deposits on the surface of the part.

[0032] Before using this method to clean, we used scanning electron microscope (SEM), energy spectrometer (EDS), secondary ion mass spectrometer (SMIC) to analyze the surface of the parts to be cleaned, and found that after a period of use of polycrystalline etching The deposits (pollutants) on the surface of the parts in the chamber mainly include: organic impurities, metal impurities, electrode impurities, silicon impurities, fluoride impurities, and surface particl...

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Abstract

The invention relates to a cleaning method of the surface of ceramic component in a polysilicon etching cavity. By adopting organic solvents, alkaline solution, acid solution and ultrapure water to clean the components, the polymers attached on the surface of ceramic component in polysilicon etching cavity can be removed effectively. The invention also has the advantages of simple steps and ideal cleaning effect without damnification of the ceramic component in polysilicon etching cavity. The ceramic component in polysilicon etching cavity used in the semiconductor process is cleaned for a certain period by applying semiconductor technique, so that the pollutants on the surface of ceramic component in a polysilicon etching cavity can be completely removed without damnification of the ceramic component in polysilicon etching cavity. The cleaned ceramic component in polysilicon etching cavity completely meets the normal technique requirements, thus the cleaning method completely achieves good pollutants removal effect.

Description

Technical field [0001] The invention relates to a method for cleaning the surface of a part, in particular to a method for cleaning the surface of a ceramic material part in a polysilicon etching chamber in a microelectronic process. Background technique [0002] With the development of semiconductor chip technology, the technology node has developed from 250nm to 65nm, or even below 45nm, and the size of silicon wafers has also increased from 200mm to 300mm. Under such circumstances, the cost of each silicon wafer has become higher and higher. . The process requirements for processing silicon wafers are becoming more and more stringent. Semiconductor processing needs to go through multiple processes, including deposition, photolithography, etching, etc. The etching process is one of the more complicated ones. The state of the plasma during the plasma etching process, various process parameters, etc., and the etching result D. [0003] During the microelectronics process and the ...

Claims

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Application Information

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IPC IPC(8): B08B3/08B08B3/12B08B7/04B08B1/00C11D7/50F26B5/00F26B3/02H01L21/00H01L21/3065C11D7/04
Inventor 童翔
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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