Method for improving solar battery diffusion

A solar cell and resistivity technology, which is applied in circuits, electrical components, sustainable manufacturing/processing, etc., can solve the problems of high resistivity monocrystalline silicon solar cells that are difficult to achieve high conversion efficiency, and achieve low consumption of raw materials and time , Simple operation and convenient use

Inactive Publication Date: 2008-08-06
JIAWEI SOLAR WUHAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to continue to improve battery efficiency in production, new types of batteries such as grooved buried grid, selective emitter structure, and rear point contact structure have appeared in the industry. However, mass production requires huge technical and financial support, and not all companies have It is more difficult to achieve high conversion efficiency in the manufacture of high-resistivity monocrystalline silicon solar cells due to the relationship between the substrate

Method used

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Examples

Experimental program
Comparison scheme
Effect test

example 1

[0037] Example 1: A method for improving the diffusion characteristics of solar cells, the steps are as follows:

[0038] 1) Raw materials used:

[0039] P-type monocrystalline silicon, thickness 280um~300um, resistivity 0.5~7Ωcm

[0040] 2) Diffusion

[0041] Diffusion temperature: 840 or 850 or 860 or 870°C

[0042] Gas flow rate: large nitrogen 25L / min, small nitrogen 2.2L / min, dry oxygen 2.2L / min; duration: 30min

[0043] 3) Oxygen redistribution

[0044] Temperature: 840 or 850 or 860 or 870°C

[0045] Gas flow rate: large nitrogen 25L / min, small nitrogen 0L / min, dry oxygen 3L / min; duration: 10min

[0046] 4)Drive in

[0047] Temperature: 840 or 850 or 860 or 870°C

[0048] Gas flow rate: large nitrogen 25L / min, small nitrogen 0L / min, dry oxygen 0 / min; duration: 10min. The sheet resistance of the silicon wafer surface is 30-34Ω / □.

[0049] The difference in performance between batteries using two different diffusion processes, please see Table 1-1, 1-2 below

[...

example 2

[0054] Example 2: a method for improving the diffusion characteristics of solar cells, the steps are as follows:

[0055] 1) Raw materials used:

[0056] P-type monocrystalline silicon, thickness 280um~300um, resistivity 0.5~7Ωcm

[0057]2) Diffusion (changing temperature)

[0058] Diffusion temperature: 835 or 855 or 865 or 875°C

[0059] Gas flow rate: large nitrogen 25L / min, small nitrogen 2.2L / min, dry oxygen 2.2L / min; duration: 30min

[0060] 3) Oxygen redistribution

[0061] Temperature: 835 or 855 or 865 or 875°C

[0062] Gas flow rate: large nitrogen 25L / min, small nitrogen 0L / min, dry oxygen 3L / min; duration: 10min

[0063] 4)Drive in

[0064] Temperature: 835 or 855 or 865 or 875°C

[0065] Gas flow rate: large nitrogen 25L / min, small nitrogen 0L / min, dry oxygen 0 / min; duration: 10min. The sheet resistance of the silicon chip surface is 31-33Ω / □. Please see Table 2-1 and 2-2 below.

[0066] Table 2-1 (without redistribution):

[0067]

[0068] ...

example 3

[0072] Example 3: a method for improving the diffusion characteristics of solar cells, the steps are as follows:

[0073] 1) Raw materials used:

[0074] P-type monocrystalline silicon, thickness 280um~300um, resistivity 0.5~7Ωcm

[0075] 2) Diffusion (increase large nitrogen, dry oxygen flow, reduce small nitrogen flow)

[0076] Diffusion temperature: 845 or 855 or 868 or 877°C

[0077] Gas flow rate: large nitrogen 30L / min, small nitrogen 1.8L / min, dry oxygen 4L / min; duration: 30min

[0078] 3) Oxygen redistribution (increase large nitrogen, dry oxygen flow)

[0079] Temperature: 845 or 855 or 868 or 877°C

[0080] Gas flow rate: large nitrogen 30L / min, small nitrogen 0L / min, dry oxygen 4L / min; duration: 4min

[0081] 4) Drive in (increase the nitrogen flow rate)

[0082] Temperature: 845 or 855 or 868 or 877°C

[0083] Gas flow rate: large nitrogen 30L / min, small nitrogen 0L / min, dry oxygen 0 / min; duration: 10min After the whole process is completed, the surface resi...

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Abstract

The present invention discloses a method for improving the diffusion of a solar cell, comprising the following steps: A. adopting silicon material and P conductive type; B. diffusion: a silicon wafer chemically reacts with oxygen and phosphorus oxychloride at high temperature to produce phosphor, phosphorus pentachloride, phosphorus pentoxide and chlorine; C. feeding oxygen to reallocate: feeding oxygen to continue to react with unexhausted PCl5 to produce phosphorus; D. a phosphor atom Drive in process which is combined with the reallocation; E. the surface block resistance is 28-38 omega after the diffusion, the reallocation and Drive in processes. The method is capable of improving the conversion efficiency of high resistance rate single crystal silicon solar cells, the diffusion of the diffused silicon wafer surface is uniform; the method is easily implemented, the operation is convenient and the cost is low.

Description

technical field [0001] The invention belongs to the field of manufacturing monocrystalline silicon solar cells, and more specifically relates to a method for improving the diffusion of solar cells. The method is widely used in the manufacturing process of monocrystalline silicon solar cells (especially silicon wafers with relatively high matrix resistivity). Background technique [0002] At present, the main manufacturing process of monocrystalline silicon solar cells has been standardized, and the main steps it goes through are: [0003] 1. Chemical cleaning and surface structuring (texturing): through chemical reaction, the original bright silicon wafer surface forms a pyramid-like structure to enhance light absorption. The reflectivity is reduced from 35% to about 10%; [0004] 2. Diffusion: This is one of the core steps in the solar cell manufacturing process. After diffusion, the surface of the P-type silicon wafer becomes N-type, thereby forming a PN junction, and the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 孙永明丁孔奇李树贵周炜熊光宇徐俊
Owner JIAWEI SOLAR WUHAN
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