Production method of SONOS flash memory
A manufacturing method and memory technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as short circuit of different memory cells, polysilicon residue, etc., and achieve the effect of improving performance and preventing leakage current.
Active Publication Date: 2008-08-20
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF1 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0010] The problem solved by the present invention is that the method for making SONOS flash memory in the prior art will have polysilicon residue between different storage units, resulting in the defect of short circuit between different storage units
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0021] The specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. The present invention only describes one storage unit of the flash memory. The structure and formation process of the peripheral circuit are the same as the prior art. For the specific formation process, please refer to the US Patent No. US6797565, which will not be further described here.
[0022] The essence of the present invention is to provide a method for manufacturing a SONOS flash memory. A second polysilicon layer is formed on the surface of the first polysilicon layer and the dielectric layer, and the second polysilicon layer is etched along the word line direction. After exposing the dielectric layer, perform rapid thermal annealing for 10 to 20 seconds to oxidize the sidewalls of the dielectric layer and the polysilicon residues generated on the sidewalls of the first polysilicon layer into silicon oxide. Therefore, the original dielec...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
Login to View More
Abstract
The invention relates to a method for manufacturing a SONOS flash memory, comprising the steps that: a dielectric layer- trapping charge layer-dielectric layer three-layer stacking structure, a first polycrystalline silicon layer and a semiconductor liner of a corrosion barrier layer are provided; the corrosion barrier layer, the first polycrystalline silicon layer and the dielectric layer- trapping charge layer-dielectric layer three-layer stacking structure are successively etched along the bit line direction, until the semiconductor layer is exposed, and an opening is formed; a source electrode and a drain electrode are formed on the semiconductor liner by the opening; the dielectric layer is formed in the opening and the corrosion barrier layer, and flattened until the corrosion barrier layer is exposed; the corrosion barrier layer is removed; second polycrystalline silicon layers are formed on the first polycrystalline silicon layer and the dielectric layer, and etched along the word line until the dielectric layer is exposed; and fast heat annealing for 10 to 20s. According to the method, polycrystalline silicon residue on the side wall of the dielectric layer and among the first polycrystalline silicon layers is removed to prevent current leakage.
Description
Technical field [0001] The invention relates to a manufacturing method of a semiconductor device, in particular to a manufacturing method of a SONOS flash memory. Background technique [0002] Generally, semiconductor memory used to store data is divided into volatile memory and non-volatile memory. Volatile memory is prone to lose its data when power is interrupted, while non-volatile memory can retain its data even when power is interrupted. data. Compared with other non-volatile storage technologies (for example, disk drives), non-volatile semiconductor memory is relatively small. Therefore, non-volatile memory has been widely used in mobile communication systems, memory cards, and so on. [0003] Recently, a nonvolatile memory having a silicon-oxide-nitride-oxide-silicon (SONOS) structure, that is, a SONOS flash memory, has been proposed. SONOS flash memory has a very thin cell, which is easy to manufacture and easy to integrate into, for example, the peripheral region and / or...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/8247H01L21/768
Inventor 徐丹蔡信裕仇圣棻孙鹏
Owner SEMICON MFG INT (SHANGHAI) CORP