Trace amount of boron doped intrinsic silicon hydride thin film

Abstract

The present invention discloses a method for making the hydrogenated Si containing hydrogenated amorphous silicon and hydrogenated nanocrystalline silicon has real intrinsic capability. In process of plasma enhanced chemical vapor deposition, adding a certain gas containing boron to mixture of hydrogen and silane, making boron counteract doping effect of inevitably n-type impurity. The hydrogenated Si film gained by this method, can improve conversion efficiency and stability of p-i-n type photovoltaic device.

Description

technical field [0001] The invention belongs to the scope of solar energy materials, and particularly relates to the formation technology of hydrogenated silicon thin films. Background technique [0002] Solar photovoltaic power generation is one of the important ways to obtain renewable energy that is beneficial to the environment. Therefore, in recent years, the development of photovoltaic cells and large-area photovoltaic modules has attracted widespread attention in the world. Thin-film solar cells represent a trend in photovoltaic technology, especially hydrogenated amorphous silicon and nanocrystalline silicon, which show great potential with the widespread application of photovoltaic devices in commercial and residential facilities. A notable feature of producing thin-film silicon photovoltaic devices at lower temperatures below 260°C is the superior performance of large-area deposition of silicon-related semiconductor layers and electrical contact layers. At the sam...

AI Technical Summary

Problems solved by technology

So the usual so-called undoped or "intrinsic" i-type silicon hydrogenated thin films don't really have intrinsic properties, because the Fermi level in this material is located above the middle of the bandgap, making The holes (minority carriers) are not easily extracted, which affects the performance of this material as an i-layer in p-i-n batteries

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