Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Production of silicon hydride thin film by hydrogen argon high dilution method

A silicon hydrogenation and thin-film technology, applied in the field of solar energy materials, can solve the problems of difficult control, unused, poor repeatability, etc., and achieve the effect of improved stability and good photoelectric performance

Inactive Publication Date: 2008-08-20
BEIJING XINGZHE MULTIMEDIA TECH
View PDF0 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This PECVD method of growing thin film silicon using a very large amount of hydrogen has many disadvantages: time-consuming, high cost (a lot of high-purity gas is used), difficult to control, and poor repeatability, especially difficult in large areas. Satisfactory uniformity is obtained on the substrate or substrate (eg, greater than 1 square meter)
However, the PECVD method using both highly hydrogen and inert gas to dilute silane has not been adopted

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Production of silicon hydride thin film by hydrogen argon high dilution method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] Below is an embodiment of the present invention, as shown in the accompanying drawings, a conventional capacitively coupled PECVD system includes the following components: a vacuum box 10; a source gas inlet 53; a gas outlet 16 after the reaction; An excitation electrode 88 (negative electrode); a ground electrode 77 (positive electrode) parallel to the excitation electrode; a substrate 3 placed on the surface of the ground electrode facing the excitation electrode; a heater 66 placed on the back side of the ground electrode and a Excitation electrode power supply cable 89. When using this system to deposit hydrogenated silicon thin film, the excitation electric energy provided by the outside is applied to the negative electrode 88 through the cable 89, and plasma is generated in the region 31 between the two electrodes. The source gas mixture used contains not more than 10% silane, and contains a high percentage of inert gas and hydrogen at the same time, wherein the g...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention discloses technique means to produce hydrogenated Si film by hydrogen argon high dilution method in PECVD process. In the process of sensivitve sensitivity hydrogenated Si film by PECVD (plasma enhanced chemical vapor deposited method), if introducing a mount of inert gases (such as argon) and hydrogen to mixture of source gas containing silane in deposited process, the formed film has better photovoltaic capability and stability. Comparing to pure hydrogen dilution, the hydrogen and argon dilution method is more efficient, and more suitable for large area, high speed produce of solar cell based on hydrogenated Si film.

Description

technical field [0001] The invention belongs to the scope of solar energy materials, and in particular relates to the manufacturing process of semiconductor thin films based on hydrogenated silicon. Background technique [0002] Solar photovoltaic power generation is one of the important ways to obtain renewable energy that is beneficial to the environment, and thin-film solar cells represent the development trend of photovoltaic technology. Materials collectively referred to as hydrogenated silicon thin films, including hydrogenated amorphous silicon and hydrogenated nanocrystalline silicon, are the preferred photoelectric conversion materials for thin-film solar technology. Solar cells based on hydrogenated silicon thin films have the advantages of low cost and easy large-area manufacturing and integration, but compared with traditional crystalline silicon photovoltaic devices, their conversion efficiency is low. For example, one of the biggest disadvantages of amorphous ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/20C23C16/00C23C16/50C23C16/30
CPCY02P70/50
Inventor 李沅民马昕
Owner BEIJING XINGZHE MULTIMEDIA TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com