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Non-bismuth additive ZnO Low-voltage Varistor Ceramics and method for making same

A technology of varistor ceramics and manufacturing methods, applied in the direction of varistors, etc., can solve the problems of low nonlinear coefficient and high varistor voltage, and achieve the effects of uniform distribution, small investment, and improved electrical parameter values

Inactive Publication Date: 2008-10-15
KUNMING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the samples produced by these methods generally have the defects of high varistor voltage and low nonlinear coefficient, and these samples have not unified the lower varistor voltage and the higher nonlinear coefficient in terms of performance requirements.

Method used

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  • Non-bismuth additive ZnO Low-voltage Varistor Ceramics and method for making same
  • Non-bismuth additive ZnO Low-voltage Varistor Ceramics and method for making same
  • Non-bismuth additive ZnO Low-voltage Varistor Ceramics and method for making same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Embodiment 1: as figure 1 As shown, the manufacturing method of the non-Bi-based low-voltage ZnO varistor ceramic material is to use ZnO powder first, and add 0.5% TiO by molar ratio. 2 , 0.3% SiO 2 , 0.7% Cr 2 o 3 , 5% PbO, 2% B 2 o 3 , 5% nano ZnO powder to form the mixed raw material, then the raw material was mixed in a planetary ball mill by adding water and alcohol for 3 hours; dry, then passed through a 320-mesh standard sieve), pressed into blocks under a certain pressure, pre-fired at 600-750°C, ground again, put into a ball mill tank, added water and alcohol to grind for 8-12 hours; the ball-milled slurry Drying and granulation (add an appropriate amount of 7% PVA aqueous solution to the dried powder, and when the shape is like fish scales, it means that the mixture is uniform, then pass through a 40-mesh standard sieve, pre-press into blocks with a pressure of 50Mpa, then break, and again pass through a 45-mesh standard sieve) to obtain a powder with a ...

Embodiment 2

[0021] Embodiment 2: as figure 1 As shown, the manufacturing method of the non-Bi-based low-voltage ZnO varistor ceramic material is to use ZnO powder first, and add 0.5% TiO by molar ratio. 2 , 0.3% SiO 2 , 0.7% Cr 2 o 3 , 0.2% Co 2 o 3 , 5% PbO, 2% B 2 o 3 , 5% nano ZnO powder to form the mixed raw material, then the raw material was mixed in a planetary ball mill by adding water and alcohol for 3 hours; dry, then passed through a 320-mesh standard sieve), pressed into blocks under a certain pressure, pre-fired at 600-750°C, ground again, put into a ball mill tank, added water and alcohol to grind for 8-12 hours; the ball-milled slurry Drying and granulation (add an appropriate amount of 7% PVA aqueous solution to the dried powder, and when the shape is like fish scales, it means that the mixture is uniform, then pass through a 40-mesh standard sieve, pre-press into blocks with a pressure of 50Mpa, then break, and again pass through a 45-mesh standard sieve) to obtai...

Embodiment 3

[0024] Embodiment 3: as figure 1 As shown, the manufacturing method of the non-Bi-based low-voltage ZnO varistor ceramic material is to use ZnO powder first, and add 0.5% TiO by molar ratio. 2 , 0.3% SiO 2 , 0.5% Cr 2 o 3 , 0.5% Co 2 o 3 , 0.2% MnO 2 , 5% PbO, 2% B 2 o 3 , 7% nano ZnO powder to form the mixed raw material, then the raw material was mixed in a planetary ball mill by adding water and alcohol for 3 hours; dry, then passed through a 320-mesh standard sieve), pressed into blocks under a certain pressure, pre-fired at 600-750°C, ground again, put into a ball mill tank, added water and alcohol to grind for 8-12 hours; the ball-milled slurry Drying and granulation (add an appropriate amount of 7% PVA aqueous solution to the dried powder, and when the shape is like fish scales, it means that the mixture is uniform, then pass through a 40-mesh standard sieve, pre-press into blocks with a pressure of 50Mpa, then break, and again pass through a 45-mesh standard s...

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Abstract

The invention relates to a method for manufacturing non-Bi low-voltage ZnO varistor ceramic materials, and belongs to the technology field of an electric component as well as the material manufacture thereof. Zinc oxide is added with the oxide powder of any one from doping elements such as Al, Fe, Eu, Pr, La, Ce, Nd, B, Si, Mn, Cr, Co, Pb, Ti and nanometer ZnO to compose mixed raw materials, the raw materials are mixed, ground, dried, pressed into blocks and pre-sintered at 600 DEG C to 750 DEG C, and then are put into a ball milling pot for being milled, granules are made after the milled material is dried and screened, the powder material is pressed into small round slices which are then heated to 600 DEG C to 720 DEG C for thermal latex exuding, and the low-voltage ZnO varistor ceramic materials can be obtained after the round slices are further sintered and cooled to the room temperature; furthermore, the surface processing and the silver plating are carried out, and the products are encapsulated after being tested, thereby obtaining low-voltage ZnO varistors. The method has the advantages that the manufacturing process is simple; the cost is lower; the performance is good; the application range is wide; the repeatability, the stability and the consistency of the produced varistors are good; the electrical parameter values have obvious improvements and so on.

Description

Technical field: [0001] The invention relates to a method for manufacturing a non-Bi-based low-voltage ZnO pressure-sensitive ceramic material, and belongs to the technical field of electrical components and material manufacturing. Background technique: [0002] Low-voltage ZnO varistors were first researched and developed abroad in the 1980s. Low-voltage ZnO varistor has the double excellent characteristics of low-voltage sensitive voltage and high dielectric coefficient, and its surge resistance is also very strong. More importantly, its process is simple. Reduced, it has the advantages of low cost, excellent non-ohmic characteristics, fast response time, small leakage current, large flow capacity, etc., and is widely used in electronic equipment and power systems and other fields. With the miniaturization and integration of electronic products, the demand for low-voltage varistors is increasing, and it is a promising compound functional resistance element. [0003] Ther...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/453C04B35/622H01C7/10
Inventor 甘国友王立惠严继康孙加林杜景红陈敬超
Owner KUNMING UNIV OF SCI & TECH
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