Indium compositions

A technology of compositions and organic compounds, applied in circuits, electrical solid state devices, semiconductor devices, etc., can solve problems such as equipment failures

Active Publication Date: 2008-11-19
ROHM & HAAS ELECTRONICS MATERIALS LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Whiskers can cause defects in electrical

Method used

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  • Indium compositions
  • Indium compositions

Examples

Experimental program
Comparison scheme
Effect test

Embodiment I

[0061] Embodiment 1 (comparative example)

[0062] The following aqueous indium electrochemical compositions were prepared:

[0063] Table 1

[0064] components

quantity

Indium(3+) ion (from indium sulfate)

30g / L

Ammonium hydroxide

170g / L

boric acid

80g / L

tartaric acid

300g / L

Conventional Indium Plating Bath Additives

0.5g / L

water

required amount

pH

3

[0065] The equipment used for the electrochemical deposition of metal indium is a conventional commercially available electrolytic cell.

[0066] The pH of the indium electrochemical composition was maintained at 3 and the temperature at 60°C. The composition was continuously stirred during indium metal plating. The cathode current density is kept at 10A / dm 2 , Indium deposition rate is 20 seconds 1μm (23mg / A).

[0067] figure 1 Photographs of metal indium-coated working electrodes with a cathode efficiency of ...

Embodiment II

[0069] The following aqueous indium electrochemical compositions were prepared:

[0070] Table 2

[0071] components

quantity

Indium(3+) ion (from indium sulfate)

60g / L

Methanesulfonic acid

30g / L

Imidazole-epichlorohydrin copolymer 1

100g / L

water

required amount

pH

1-1.2

[0072] 1. Lugalvan TM IZE, available from BASF (IZE contains 48-50% copolymer)

[0073] The equipment used for electroplating metal indium is a conventional commercially available electrolytic cell.

[0074] During metal indium deposition, the pH of the indium electroplating composition is maintained at 1-1.2. The temperature of the composition was maintained at 60°C during electroplating. The electroplating composition was continuously stirred during metal indium deposition. The cathodic current density is maintained at 10A / dm throughout the plating period 2 , deposit 1 μm metal indium (23mg / A) on the working el...

Embodiment III

[0078] The procedure in Example II above was repeated except that the epihalohydrin copolymer was an imidazoline-epichlorohydrin copolymer prepared by conventional methods known in the art. Indium compositions comprising imidazoline-epichlorohydrin copolymers are expected to suppress the formation of hydrogen gas during indium electroplating and as figure 2 A smooth and uniform layer of metal indium was deposited on the working electrode as shown. It is also expected that an indium base layer deposited from the composition will also prevent, or at least inhibit, whisker formation after storage at a temperature of 40°C or higher and a relative humidity of at least 95% for at least one month.

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PUM

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Abstract

Indium compositions including one or more epihalohydrin copolymers as hydrogen suppressor compounds and methods of electrochemically depositing indium metal from the compositions onto substrates are disclosed. Articles made with the indium compositions are also disclosed.

Description

technical field [0001] The present invention relates to indium compositions for the electrochemical deposition of indium metal and indium alloys. More particularly, the present invention relates to indium compositions comprising one or more hydrogen suppressing compounds for the electrochemical deposition of indium metal and indium alloys. Background technique [0002] Electrochemical deposition of indium metal is challenging due to the simultaneous occurrence of indium metal deposition and the electrolysis of hydrogen from water. Hydrogen evolution compromises cathodic current efficiency, resulting in low metallic indium deposition rates and undesirably coarse powdery indium metal deposits or indium-free deposits. [0003] However, due to its unique physical properties, indium is a highly demanded metal in many industries. For example, it is soft enough to be easily deformed and filled in the microstructure between the two fittings, it has a low melting temperature (156°C...

Claims

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Application Information

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IPC IPC(8): C25D3/54C25D3/56
CPCH01L24/29H01L2924/01074H01L2924/1579H01L2924/0103H01L2224/73253H01L2924/01047H01L24/83H01L2924/014C25D3/54H01L2924/0105H01L2924/01322H01L2924/01029H01L2924/01016H01L24/32H01L2224/29109H01L23/3735C25D3/56H01L2224/29298H01L2924/0132H01L2924/0104H01L2924/01013H01L2924/01005H01L2924/01082H01L2924/01033H01L2924/01049H01L2224/838H01L2924/01079H01L2924/10329H01L23/42H01L2924/15787H01L2224/29101H01L2924/3011H01L2924/10253H01L2924/157H01L2924/01327H01L2924/01006H01L23/3737H01L2924/01078H01L2924/01019H01L2924/01011H01L2924/14H01L2224/29H01L2924/01023H01L2924/01058H01L2924/01012H01L2224/13111H01L2924/00013H01L2924/1461H01L2924/12044H01L2924/00014H01L2924/013H01L2924/01083H01L2924/01022H01L2924/00011H01L2224/29099H01L2224/29199H01L2224/29299H01L2224/2929H01L2924/00C08L71/03C08K3/08
Inventor E·佐克斯F·J·施瓦格T·加伊斯克N·E·布雷斯M·P·托本
Owner ROHM & HAAS ELECTRONICS MATERIALS LLC
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