Transparent electrode for organic electronic devices
A technology of transparent electrodes and transparent conductive layers, applied in organic semiconductor devices, electrical solid devices, electrical components, etc., can solve problems hindering the development of TOLED technology
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Embodiment 1
[0088] Example 1: Fabrication of a transparent electrode consisting of a PS-amine / ITO bilayer
[0089] A PS-amine / ITO bilayer electrode was fabricated as follows. Clean quartz substrates with acetone and isopropanone before use. The PS-amine layer was spin-coated on the LEP from a solution of PS-amine in 1-butanol in air, and then baked at 90 °C for 30 min. The thickness of the PS-amine layer was about 5-8 nm as determined by both mechanical and optical profilometry. A 110 nm thick ITO layer was then sputtered on the PS-amine layer. The transmittance of PS-amine / ITO double-layer electrode to different wavelengths of light is shown in Table 1.
Embodiment 2
[0090] Embodiment 2: the manufacture of the transparent electrode that is made up of NaF / ITO bilayer
[0091] A NaF / ITO double layer electrode was fabricated as follows. Clean quartz substrates with acetone and isopropanone before use. The substrate was then transferred to an argon-filled glove box (moisture and oxygen nominally less than 1 ppm). Then at 2×10 -6 A 4 nm thick layer of sodium fluoride was thermally evaporated onto a quartz substrate at a reference pressure of Torr. The samples were briefly exposed to ambient conditions (24°C, 42% relative humidity) before being transferred into the ITO deposition chamber. Take care to minimize the time of exposure to air. Then a 110 nm thick ITO layer was sputtered on the NaF layer. The light transmittance of NaF / ITO bilayer is shown in Table 1.
[0092] Table 1 Transmittance of transparent electrodes to different wavelengths
[0093]
Embodiment 3
[0096] Example 3: Fabrication of transparent OLED with PS-amine / ITO bilayer as cathode
[0097] Transparent OLEDs with PS-amine / ITO bilayer cathodes were fabricated as follows. Glass pre-coated with ITO was used as the substrate. A 60-nm-thick PEDOT:PSS layer was deposited on the UV-ozone-treated ITO substrate by spin coating, followed by drying in air at 180 °C for 1 h. The green-emitting LEP ( 1304) layer was spin-coated on the PEDOT:PSS layer. The thickness of the LEP layer was 80 nm as determined by mechanical profilometry. Next, as described in Example 1, a PS-amine / ITO bilayer electrode was applied on the LEP. Figure 11 It is shown that the device of Example 3 is substantially transparent to radiation having a wavelength of 400-800 nm. Figure 12 It shows that compared with the device of Comparative Example 2, the device of Example 3 has a higher efficiency of converting electrical energy into light energy.
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