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CdTeS/ZnS cladding quantum dot and preparation thereof

A quantum dot and cladding technology, which is applied in the field of CdTeS/ZnS cladding quantum dots and its preparation, can solve the problems of complex process, high price, and unsafety, and achieve the effects of high fluorescence intensity, low cost, and narrow half-peak width

Inactive Publication Date: 2008-12-24
天津游瑞量子点技术发展有限公司
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  • Abstract
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  • Application Information

AI Technical Summary

Problems solved by technology

[0005] At present, the common chemical preparation methods mainly adopt the preparation process of core / shell quantum dots, using flammable, explosive and expensive raw materials, such as Cd(CH 3 ) 2 Such as organic cadmium materials, the process is complex, unsafe, and difficult to operate

Method used

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Experimental program
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Effect test

Embodiment Construction

[0015] The preparation of CdTeS / ZnS quantum dots is divided into four parts: (a) preparation of Te and S stock solutions; (b) preparation of ZnO stock solutions; (c) synthesis of CdTeS / ZnS quantum dots; (d) post-treatment.

[0016] (a) Preparation of Te and S stock solutions

[0017] Add 5 mg Te powder and 320 mg S powder into a 25 ml round bottom flask (reactor A), transfer 5 ml OA and 1 ml TOP, and obtain TeS stock solution after dissolving.

[0018] (b) Add 163mg of ZnO into a 50ml three-neck flask (reactor B), transfer 5ml of OA and 20ml of TOA into it and stir evenly to prepare stock solution B.

[0019] (c) Synthesis of CdTeS quantum dots

[0020] A 100ml four-neck flask (reactor C) was equipped with stirring, a thermometer and an Ar gas protection device, accurately weighed 400 mg of CdO, added 20 ml of OA, 5 ml of TOA and 20 ml of TOP, replaced the clean air with Ar gas, and heated up while stirring. When the temperature of reactor C reaches 260-300°C, add stock solu...

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Abstract

The invention discloses a CdTeS / ZnS jacketing quantum spot and a preparation method thereof. The method comprises the following steps that: inorganic substances such as cadmium oxide or cadmium acetate are taken as a raw material, the CdTeS quantum spot is prepared at a certain temperature, and ZnS is jacketed. The method avoids the complicated preparation process of the prior nuclear / housing quantum spot and overcomes the shortcomings that the organic cadmium such as Cd(CH3) 2 is flammable and combustible and the price is high. The method has simple and convenient operation, good repetitiveness, safety and easy implementation, and low cost. The prepared CdTeS / ZnS jacketing quantum spot not only has the characteristics of the prior CdTeS quantum spot of high fluorescence intensity, narrow half-peak width, high quantum productivity and good stability but also reduces the toxicity and further widens the application range of the quantum spot.

Description

technical field [0001] The invention relates to a CdTeS / ZnS cladding quantum dot and its preparation method Background technique [0002] Quantum dots (quantum dots, QDs), also known as semiconductor nanocrystals (semiconductor nanocrystal), are nanocrystalline grains composed of II-VI or III-V elements. The ultrafine size of quantum dots leads to a quantum scale effect that gives them unique optical and electronic properties. Quantum dots can emit fluorescence of different colors due to their different sizes (or different compositions), and a single wavelength of light can be used to excite quantum dots of various colors. In recent years, due to its unique photoluminescent properties, quantum dots have attracted more and more attention. They were first applied in life science research in 1998. Subsequently, their research and application scope involved multiple disciplines such as physics, chemistry, materials, and biology. A new interdisciplinary subject. [0003] Commo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/88C09K11/02
Inventor 曹世东赵国锋沙印林谢伟
Owner 天津游瑞量子点技术发展有限公司
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