Plasma reinforcement cyclic deposition method for depositing a metal silicon nitride film

A metal nitride, deposition method technology, applied in metal material coating process, gaseous chemical plating, coating and other directions, can solve problems such as unpopularity

Inactive Publication Date: 2008-12-24
AIR PROD & CHEM INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Using metal chloride precursors, a silicon source such as silane, and ammonia requires an extremely high temperature process up to about 1000°C, which makes the process undesirable for certain substrates

Method used

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  • Plasma reinforcement cyclic deposition method for depositing a metal silicon nitride film
  • Plasma reinforcement cyclic deposition method for depositing a metal silicon nitride film
  • Plasma reinforcement cyclic deposition method for depositing a metal silicon nitride film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0063] Example 1. Preparation of titanium silicon nitride (TiSiN) film at 450°C by PEALD

[0064] The cycle consisted of the sequential supply of the following: TDMAT, which was bubbled through argon carrier gas at a flow rate of 25 sccm for different pulse times; argon purge gas, supplied at a flow rate of 500 sccm for 5 seconds; ammonia gas, supplied at a flow rate of 100 sccm during RF plasma generation. Flow rate supplied for 5 seconds; argon purge gas supplied for 5 seconds at a flow rate of 500 sccm; BTBAS bubbled through argon carrier gas for different pulse times at a flow rate of 25 sccm; Ar purge gas supplied for 5 seconds at a flow rate of 500 sccm; ammonia gas , supplied at a flow rate of 100 sccm for 5 seconds during RF plasma generation; and argon purge gas, supplied at a flow rate of 500 sccm for 5 seconds. The process chamber pressure was approximately 1.0 Torr, and the heater temperature was 450°C, corresponding to a wafer temperature of 395°C.

[0065] Keepi...

Embodiment 2

[0070] Example 2 A titanium silicon nitride (TiSiN) film was prepared by PEALD at 250°C

[0071] The cycle was the same as in Example 1 above, except that the heater temperature was 250°C. A heater temperature of 250°C corresponds to a wafer temperature of 235°C.

[0072] attached figure 1 and 2 The results of the tests described above are illustrated.

[0073] as attached figure 1 As shown, the resistivities of the above cases are 915.1, 123.5 and 22.5 mOhm-cm, respectively, and the RBS analysis shows that the Ti / Si ratios are 1.3, 1.6 and 2.1, respectively.

[0074] Likewise, as attached figure 2 As shown, the deposition rates of the above cases are 0.6, 0.8 and / cycle, reflecting that the above is within the ALD range. In other words, a metal silicon nitride film can be provided, which can be grown at a low process temperature.

Embodiment 3

[0075] Example 3. Fabrication of Titanium Silicon Nitride (TiSiN) Films by Thermal ALD at 250°C

[0076] The cycle consisted of the sequential supply of the following: TDMAT, bubbled through argon carrier gas at a flow rate of 25 sccm for different pulse times; argon purge gas, supplied at a flow rate of 500 sccm for 5 seconds; ammonia, at 100 sccm without RF plasma generation The flow rate of argon is supplied for 5 seconds; argon purge gas is supplied for 5 seconds at a flow rate of 500 sccm; BTBAS is bubbled through argon carrier gas for different pulse times at a flow rate of 25 sccm; argon purge gas is supplied for 5 seconds at a flow rate of 500 sccm; gas, supplied at a flow rate of 100 sccm for 5 seconds without RF plasma generation; and argon purge gas, supplied at a flow rate of 500 sccm for 5 seconds. The pressure of the process chamber is approximately 1.0 Torr, and the heater temperature of 250°C corresponds to a wafer temperature of 235°C.

[0077] Keeping the to...

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Abstract

The invention relates to a plasma reinforcement circulation sedimentation nitridation method of metal silicon film, especially relates to a nitridation metal silicon film forming method using metal amination compound, silicon precursor and nitrogen source gas as precursor by circulation the film sedimentation under plasma environment. The sedimentation method for forming nitridation metal silicaon film on substrate comprises the following steps: pulse adding metal amination compound precursor; sweeping unreacted metal amination compound; inducing the nitrogen source gas in the reaction chamber under plasma environment; sweeping the unreacted nitrogen source gas; pulse adding the silicon precursor; sweeping the unreacted silicon precursor; inducing the nitrogen source gas into the reaction chamber under plasma environment; sweeping the unreacted nitrogen source gas.

Description

technical field [0001] The invention relates to a method for forming a metal silicon nitride film according to cyclic film deposition using metal amide, silicon precursor and nitrogen source gas as precursors in a plasma environment. Background technique [0002] Phase change memory (PRAM) devices use phase change materials that can be electrically switched between amorphous and crystalline states. Typical materials suitable for this application include various chalcogenide elements such as germanium, antimony and tellurium. To initiate the phase transition, the chalcogenide material should be heated using a heater. There are many potential heating materials such as titanium nitride (TiN), titanium aluminum nitride (TiAlN), titanium silicon nitride (TiSiN), tantalum silicon nitride (TaSiN), and others. [0003] Widely studied deposition methods for making these films are physical vapor deposition (PVD), such as sputtering, and chemical vapor deposition (CVD) methods, usual...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/30
CPCC23C16/34C23C16/45531C23C16/45542C23C16/45553C23C16/50
Inventor 金文径金武性杨相铉雷新建
Owner AIR PROD & CHEM INC
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