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Organic metal film preparation enhancing ultraviolet response of silicon based image device

An imaging device and organometallic technology, which is applied in the field of vacuum evaporation preparation of organometallic complex Alq3 powder as coating material, can solve the problems of attenuation and aging of organic frequency conversion films, and achieve the goal of overcoming attenuation and aging with time and improving ultraviolet response Ability, Enhanced Sensitivity Effects

Inactive Publication Date: 2009-01-07
UNIV OF SHANGHAI FOR SCI & TECH
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Problems solved by technology

[0005] The purpose of the present invention is to provide a method for preparing a frequency conversion film for the weak response of the current imaging device to ultraviolet radiation and the problem that the organic frequency conversion film is easy to decay and age with time

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  • Organic metal film preparation enhancing ultraviolet response of silicon based image device

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Embodiment Construction

[0015] A method for preparing an organometallic thin film that enhances the ultraviolet response of silicon-based imaging devices. First, the selected organometallic complex Alq 3 The powder is used as the coating material, the baking time is 6-12 hours, preferably 8 hours, and the temperature is 300°C.

[0016] The vacuum coating device used in the present invention is as figure 1 shown. The prebaked Alq 3 The coating material 13 is placed on the evaporation boat 14 connected with the evaporation electrode, and the processed photosensitive element 11 is placed on the substrate frame. Evacuate the high vacuum chamber, vacuum degree: 2×10 -3 Pa; after the pressure in the bell jar 15 reaches the required value, the evaporation boat 14 can be heated for evaporation, evaporation current: 20A; baking temperature: 200°C; optical monitoring wavelength: 500nm; film thickness: optical thickness 125nm ; After the evaporation is completed, close the high vacuum valve, deflate the bel...

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Abstract

The invention relates to an organic metal film preparation method for enhancing the ultraviolet response of a silicon-based imaging device. The preparation method is characterized in that a pre-baked organic metal valency substance Alq3 fine power is taken as coating material; UV frequency conversion materials are coated by vaporization into the film by adopting vacuum deposition on the surface of photosensitive units of the silicon-based imaging device. The baking time of the pre-baked organic metal valency substance Alq3 fine power is six to twelve hours, the temperature is 300 DEG C. The vapor deposition conditions of the vacuum deposition preparing a frequency conversion film are that: the vacuum degree is 2*10<-3>Pa; the optical monitoring wavelength is 500nm, the thickness of the film is 125 nm, the thickness of the optical is 125nm, the evaporation current is 20A.; the baking temperature is 200 DEG C. The film not only effectively improves the Ultraviolet response capability of the silicon-based imaging device, but also overcomes the problem that the organic frequency conversion film weakens and ages with time.

Description

technical field [0001] The invention relates to the vacuum evaporation coating technology of organic metal thin films, in particular to a frequency conversion material for enhancing the ultraviolet response of silicon-based imaging devices: organic metal complexes Alq 3 The powder is used as the vacuum evaporation preparation method of the coating material. Background technique [0002] Imaging devices in photodetectors, such as CCD (Charge Coupled Device, charge-coupled device), CMOS (Complementary Metal-Oxide Semiconductor, additional metal oxide semiconductor components), etc., have a weak response in the ultraviolet band, which is caused by ultraviolet light in the ultraviolet band. The penetration depth in polysilicon is very small (<2nm). Since the commercial production of CCDs and other photodetectors, efforts have been made to find a way to improve the detector's UV response. In order to improve the sensitivity of the detector to ultraviolet radiation, a feasibl...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/82H01L27/146H01L27/148H01L31/18H01L31/09H01L31/0232
CPCY02P70/50
Inventor 张大伟田鑫刘猛倪争技黄元申庄松林
Owner UNIV OF SHANGHAI FOR SCI & TECH
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