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Film-forming composition

A composition and compound technology, which is applied in the fields of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problem of low protection effect of impurities, and achieve the effect of easy peeling and easy manufacturing

Inactive Publication Date: 2010-10-13
TOKYO OHKA KOGYO CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, although the silicon oxide film can be easily peeled off after diffusion, there is a problem that the protective effect of impurities is lower than that of titanium oxide.

Method used

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  • Film-forming composition
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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0098] First, gallium(III) chloride and ethanol were mixed to prepare a 1% by mass ethanol solution. In addition, tetraethoxysilane was polycondensed in ethanol under an HCl catalyst, and then diluted with ethanol so that the silica concentration became 11%, to prepare a base coating liquid. In addition, adjustment was made during the polycondensation to adjust the hydrolysis rate to 50%. Thereafter, a 1 mass percent (gallium+ethanol) solution and the base coating liquid were mixed so that the gallium concentration became 100 ppm, thereby obtaining a film-forming composition.

[0099] A protective layer is formed by coating a film-forming composition on a silicon wafer (4 inches / CZ-P: manufactured by Shin-Etsu Chemical Co., Ltd.), baking at 200°C, and then baking at 500°C for 30 minutes in air . When coating, adjust the film thickness of the formed protective layer to about 2700 . On the protective layer, apply phosphorus-added SOG (Spin On Glass) material (T-1 P-59220: m...

Embodiment 7～12

[0104] (Examples 7-12, Reference Examples 3 and 4)

[0105] With respect to embodiment 1~6, reference example 1,2, change gallium (III) chloride into aluminum nitrate, and aluminum concentration is adjusted to the same concentration as gallium, each example is respectively as embodiment 7~12, refer to Example 3, 4.

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Abstract

An SiO2-based film-forming composition giving a protective film which, after impurity diffusion, can be easily stripped off and which has a higher protective effect. The film-forming composition is one for forming a protective film which in the diffusion of an impurity into a silicon wafer, serves to partly prevent the impurity diffusion. This film-forming composition comprises a high-molecular silicon compound and a compound having a protective element which undergoes covalent bonding to the element to be diffused in the impurity diffusion and thereby comes to have eight valence electrons. The protective element is preferably gallium or aluminum when phosphorus is used as the element to be diffused, and is preferably tantalum, niobium, arsenic, or antimony when boron is used as the diffusion element.

Description

technical field [0001] The present invention relates to a composition of a protective film when impurities are diffused in a substrate in a semiconductor manufacturing process. More specifically, the present invention relates to a composition having a high protective effect and a protective film that can be easily peeled and removed from a substrate after diffusion of impurities. Background technique [0002] In the impurity diffusion process in the semiconductor manufacturing process, first, the patterning process of the protective film is performed using photolithography technology, and then, using the protective film as a mask, the selective impurity on the substrate is carried out by thermal diffusion or ion implantation. The process of diffusing the target impurity (doping). [0003] Specifically, for example, a photoresist is applied on the surface of a silicon substrate covered with an oxide film over the entire surface. Next, photolithography is used to expose and ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/22C09D183/00H01L21/316
CPCH01L21/2256H01L21/02216C09D183/04H01L21/3122H01L21/02282H01L21/316H01L21/02126
Inventor 森田敏郎佐藤功
Owner TOKYO OHKA KOGYO CO LTD