Method for preparing MgZnO single crystal film

A single crystal thin film, zinc oxide thin film technology, applied in the field of preparation of MgZnO single crystal thin film, can solve the problems that single wurtzite phase MgZnO thin film is difficult to obtain, high Mg component thin film is prone to phase separation, etc., to achieve the suppression of phase separation Formation, good reproducible effect

Active Publication Date: 2009-03-11
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Abstract
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  • Claims
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Problems solved by technology

A large number of experiments have shown that even under the non-equilibrium growth technology, it is difficult to obtain a single wurtzite phase MgZnO film with high Mg composition. The main difficulty is that the growth of high Mg composition film is extremely prone to phase separation.

Method used

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  • Method for preparing MgZnO single crystal film
  • Method for preparing MgZnO single crystal film
  • Method for preparing MgZnO single crystal film

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Effect test

Embodiment 1

[0023] A method for manufacturing a wurtzite phase MgZnO single crystal film with a Mg composition up to 49% on a sapphire-based zinc oxide film:

[0024] Such as figure 1 The process flow diagram of the present invention shown, utilizes the method for preparing zinc polar zinc oxide thin film on sapphire substrate, obtains zinc oxide template, further utilizes the real-time monitoring metal source beam current variation method in active gas environment, to Mg, Zn The beam flow is precisely controlled, so that the wurtzite phase MgZnO single crystal film with a Mg composition as high as 49% is prepared. The specific steps are:

[0025] 1) Using the molecular beam epitaxy method, import the zinc oxide template prepared on the sapphire substrate into the growth chamber, and then perform pretreatment, that is, under the ultra-high vacuum (UHV) condition, the zinc oxide template is heated to 750°C for 30 Minute heat treatment, and then 30 minutes active oxygen plasma treatment on...

Embodiment 2

[0032] The method for manufacturing the Mg composition on the silicon-based zinc oxide film is 47% wurtzite phase MgZnO single crystal film:

[0033] Such as figure 1 The process flow diagram of the present invention shown, utilizes the method for preparing zinc polar zinc oxide thin film on Si(111) substrate to obtain zinc oxide template, further utilizes the real-time monitoring metal source beam current variation method in active gas environment, to Mg , Zn beam flow was precisely controlled, thus preparing a wurtzite phase MgZnO single crystal thin film with a Mg composition as high as 47%. The specific steps are as follows:

[0034]1) Using the molecular beam epitaxy method, the zinc oxide template prepared on the Si(111) substrate is introduced into the growth chamber, and then pretreated. That is, under ultra-high vacuum (UHV) conditions, the zinc oxide template is heated to 600°C for 30 minutes of heat treatment, and then the surface of the substrate is treated with a...

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Abstract

The invention discloses a method for preparing an MgZnO single crystal film. In the method, a MgZnO buffer layer with middle Mg component is utilized to effectively alleviate the influence generated due to the lattice distortion brought by the Mg-O bond with strong ionicity, thereby facilitating the following growth of a MgZnO film with high Mg component. By utilizing the method, the invention has the advantages of accurately controlling the Mg component in the MgZnO alloy film, solving the difficult problem of the phase separation easily occured during the growth of the MgZnO alloy film and further obtaining the high-quality alloy film with wide forbidden band and a matching structure; moreover, the preparation method also has excellent repeatability and controllability, and can be applied to the preparation of high-performance MgZnO-based photoelectron and microelectron devices.

Description

technical field [0001] The invention relates to the technical fields of semiconductor microelectronics and optoelectronic materials, in particular to a method for preparing a MgZnO single crystal thin film. Background technique [0002] As one of the core basic materials of the third-generation semiconductor, ZnO has very superior photoelectric properties, its free exciton band gap is 3.37eV, and its free exciton binding energy is 60meV. 25meV) and another important wide-bandgap semiconductor material, which has a very broad application prospect in the field of low-threshold, high-efficiency short-wavelength optoelectronic devices. Recently, with the in-depth research on the optoelectronic and microelectronic properties of ZnO-based MgZnO alloy materials and the initial realization of its p-type doping, it is directly applied to microelectronics and optoelectronic devices such as field effect transistors, ultraviolet light-emitting diodes and lasers. Diodes have been one of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/22C30B23/02H01L31/0336H01L31/18
CPCY02P70/50
Inventor 刘章龙杜小龙梅增霞张天冲郭阳
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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