Manufacturing method for gate lateral wall layer and semi-conductor device

Abstract

A method for forming a side wall layer on a grid electrode comprises the following steps: a semi-conductor substrate provided with the grid electrode is provided; a first silica layer is formed on the surfaces of the semi-conductor substrate and the grid electrode; with hexa-chloro silane as a precursor, a first silicon nitride layer is formed on top of the first silica layer; and parts of the first silica layer and the first silicon nitride layer are removed in a selective manner so as to preserve the first silica layer and the first silicon nitride layer already formed on the side wall of the grid electrode. The invention further provides a method for manufacturing a semiconductor device. The invention can solve the problem that the bottom part of the side wall layer on the grid electrode is susceptible to depression.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for manufacturing a gate sidewall layer (Sidewall Spacer) and a method for manufacturing a semiconductor device. Background technique [0002] Metal oxide semiconductor devices are widely used in storage, digital, computer, communication and other fields due to their high response rate and low power consumption. Generally, a metal oxide semiconductor device has a gate, a source and a drain, and the gate controls the on and off between the source and the drain. A gate sidewall layer is provided on the sidewall of the gate, and the gate sidewall layer is used to protect the gate and the conductive channel below the gate. The gate sidewall layer is generally composed of insulating silicon oxide or silicon nitride or a stack of both. [0003] At 0.18um and higher technology nodes, silicon oxide as the gate sidewall layer is generally formed by chemical ...

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Problems solved by technology

[0011] However, when the surface of the semiconductor substrate is subsequently cleaned with hydrofluoric acid (for example, when forming a metal silicide contact), the bottom of the gate sidewall layer will be recessed, such as image 3 The shown depression 14b, the depression 14b is caused by the corrosion of the silicon oxide layer 14a by hydrofluoric acid in the lateral direction

The recess 14b will shorten the conductive channel of the formed metal oxide semiconductor device, which will easily cause the problem of leakage current between the source and the drain.

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