Inductance coupling coil and inductance coupling plasma apparatus

Abstract

The invention relates to the field of semiconductor manufacturing devices and particularly relates to an inductive coupling plasma device (ICP) and an inductive coupling coil used in the ICP device. The ICP device comprises a reaction chamber (10), a workbench (11), the inductive coupling coil, an inductance radio frequency matcher (12) and an inductance radio frequency power supply (13); the ICPdevice is characterized in that the inductive coupling coil is arranged in the reaction chamber (10) and positioned above the workbench (11); the inductive coupling coil is composed of the same two planar gridiron coils (1) which are connected in parallel and symmetrically arranged; wherein, each planar gridiron coil (1) uses a copper tube (2) to be folded into a gridiron structure according to aU-shaped wave path on a plane, a ceramic insulating inner sleeve (5) is arranged in the copper tube (2), the inner cavity of the ceramic insulating inner sleeve (5) is taken as a cooling water channel, and a ceramic insulating outer sleeve (6) is arranged outside the copper tube (2). The ICP device and the inductive coupling coil have good distribution uniformity of magnetic field, high efficiency and smaller damage to the surface of a substrate, thereby being applicable to large-area thin film deposition, etching, surface treatment and other semiconductor processing technologies.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing equipment, in particular to an inductively coupled plasma device (ICP) and a radio frequency inductively coupled coil used in the device. The inductively coupled plasma device is a high-density inductively coupled plasma device driven by a very high frequency power source, and can be applied to processes such as film deposition, etching, and surface treatment (such as cleaning) in semiconductor manufacturing. Background technique [0002] In the semiconductor manufacturing process, the plasma reaction device is an important processing equipment, which is widely used in thin film deposition, etching and surface treatment processes. The plasma reaction device is generally composed of a reaction chamber, a workbench, an inductive coupling element, a driving power supply, a gas supply system, and an exhaust system. The electromagnetic field that excites the plasma is provided to the reactio...

AI Technical Summary

Problems solved by technology

Especially after the processing size of the substrate increases from 100mm to 400mm, and the volume of the reaction chamber increases accordingly, the plasma excited by the planar spiral inductively coupled coil has a large asymmetry in azimuth angle, and can only rely on diffusion to make up for the peripheral Areas of low plasma density

Such a result leads to uneven deposition or etching rate and thickness of the substrate film, which affects the processing quality and stability of semiconductors.

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