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Method for preparing nanocrystalline/amorphous silicon two-phase film solar battery

A thin-film solar cell and amorphous silicon technology, which is applied in photovoltaic technology and semiconductor fields, can solve the problems of low solar cell efficiency, low carrier mobility, and high impurity content in the thin film, and achieves improved collection efficiency and high doping activation rate. , the effect of reducing the impurity concentration

Inactive Publication Date: 2010-06-16
CHANGZHOU UNIV
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Problems solved by technology

Due to the low doping efficiency of B and P in the PECVD (plasma enhanced vapor deposition method) deposition process, the pH in the general preparation process 3 / SiH 4 , BH 3 / SiH 4 The ratio is as high as 1%, so the impurity content in the film is high, resulting in low mobility of carriers, low collection efficiency, and low efficiency of solar cells

Method used

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Embodiment

[0031] Prepare glass / ITO / P + -nc-Si / I-nc-Si / N + - For solar cells with nc-Si / Al structure, use the above step (1) for chemical pretreatment; use step (2) to deposit ITO transparent conductive film; the sample is heated to 200 ° C, the sputtering gas is argon and oxygen, and argon The partial pressure ratio of gas and oxygen is 10:1, the total pressure is 0.5Pa, and the sputtering power density is 40mW / cm 2 The sputtering deposition time is 40 minutes, and the film thickness is about 80 nm. Adopt step (3) preparation thickness to be the nano-silicon thin film of 600nm; Concrete technological condition is: the background vacuum of deposition system is 5 * 10 -5 Pa. The reaction gas is a mixed gas of silane and hydrogen, the flow ratio of silane and hydrogen is 10:1, the total flow is 120 sccm, and the working pressure is 80 Pa. The power is 330W, the sinking temperature is 280°C, the deposition time is 5 hours, and the film thickness is 600nm. Step (5) is adopted to prepare...

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Abstract

The invention discloses a preparation method of a nano-crystalline / amorphous silicon diphase thin film solar cell. The method comprises the following steps: cleaning glass surface; depositing a SiN thin film by PECVD; depositing a layer of transparent conducting ITO film on the front face of a cell, preparing a hydrogenated nano-crystalline / amorphous silicon diphase thin film on an ITO / glass substrate; forming a P-type layer by B ion implantation with the energy of 200-250keV and the dosage of 1*10<17>-4*10<17> / cm<2>; and forming a N-type layer by P ion implantation with the energy of 15-30keVand the dosage of 2*10<17>-5*10<17> / cm<2>. The preparation method avoids the use of poisonous gases phosphorane and borane, provides high doping activation rates of B and P, lowers the impurity trapping center on the p layer and the n layer, improves the collection efficiency of electrons and holes, reduces contact resistance and increases short circuit current.

Description

technical field [0001] The invention relates to a method for preparing a solar cell, in particular to a method for manufacturing a nanocrystalline / amorphous silicon two-phase nano-silicon thin-film solar cell by combining sub-injection technology, which is used in the fields of photovoltaic technology and semiconductor technology. Background technique [0002] At present, in the solar cell manufacturing industry, crystalline silicon and polycrystalline silicon solar cells account for more than 80% of the market share. Due to the shortage of silicon materials and the high price, the manufacturing cost of bulk silicon solar cells has always been high. In addition, the energy consumption in the production process of bulk silicon is high, and the pollution to the environment is serious. Therefore, the development of thin film solar cells is potential. must do. At present, the production of silicon-based thin-film solar cells is mainly based on amorphous silicon thin-film materi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 丁建宁袁宁一
Owner CHANGZHOU UNIV
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