Non-refrigeration infrared detector array based on monocrystal silicon PN junction and preparing method thereof

An uncooled infrared and detector array technology, applied in the field of infrared detectors, can solve the problems of inconvenient portability, incompatible processes, high price of photonic infrared detectors, etc., so as to improve detection sensitivity and achieve industrialized mass production. , effects that are easy to integrate on a single chip

Active Publication Date: 2009-05-27
北京中科微投资管理有限公司
View PDF0 Cites 24 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Photon-type infrared detectors use narrow-bandgap semiconductor materials, such as HgCdTe, InSb, etc., and use the photoelectric effect to realize the conversion of infrared light signals into electrical signals; therefore, they need to work at a temperature of 77K or lower, which requires bulky and complicated Refrigeration equipment, difficult to miniaturize, inconvenient to carry
O

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Non-refrigeration infrared detector array based on monocrystal silicon PN junction and preparing method thereof
  • Non-refrigeration infrared detector array based on monocrystal silicon PN junction and preparing method thereof
  • Non-refrigeration infrared detector array based on monocrystal silicon PN junction and preparing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] The invention provides an uncooled infrared detector array based on the temperature characteristics of the PN junction of single crystal silicon, such as figure 1 As shown, it includes several infrared detection units arranged in sequence. Each of the infrared detection units, such as figure 2 , image 3 As shown, along the longitudinal direction, it includes: a bottom silicon layer 7 , a cavity 11 , a buried oxide layer 8 , and a top silicon layer region 9 above the buried oxide layer 8 .

[0026] The cavity 11 is surrounded by the deep groove 1, the buried oxide layer 8 and the bottom silicon layer 7;

[0027] The deep groove 1 is a lateral barrier layer between the infrared detection unit and other infrared detection units during lateral bottom silicon etching;

[0028] The buried oxide layer 8 is a vertical barrier layer that protects the top silicon layer and the infrared sensitive elements disposed in the top silicon layer from being etched when the bottom sil...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a non- refrigeration infrared detector array based on monocrystalline silicon PN junction temperature characteristic and a preparation method thereof. The preparation method of the array includes: step A. reducing and oxidizing silicon chip, longitudinally forming a bottom silicon layer, a oxygen-imbedding layer and a top silicon layer, forming a deep trough through bottom silicon etching, filling and flattening to transversely divide infrared detection units; step B. arranging a plurality of monocrystalline silicon PN junctions at the top silicon layer in each infrared detection unit; forming electrical connection wiring in each infrared detection unit, and forming a passivation layer on the monocrystalline silicon PN junction and electrical connecting line; step D. manufacturing a suspending heat insulation cantilever beam in each infrared detection unit, and etching the bottom silicon layer to form the cavity. The invention obtains detection result of infrared radiation by utilizing good temperature characteristic of the monocrystalline silicon PN junction and measuring voltage change of two ends of the monocrystalline silicon PN junction.

Description

technical field [0001] The invention relates to the technical field of infrared detectors, in particular to an uncooled infrared detector based on the temperature characteristics of a single crystal silicon PN junction and a manufacturing method thereof. Background technique [0002] Infrared imaging technology is widely used in military, industrial, agricultural, medical, forest fire prevention, environmental protection and other fields, and its core component is the Infrared Focal Plane Array (IRFPA). According to the classification of working principle, it can be divided into: photon infrared detector and uncooled infrared detector. Photon-type infrared detectors use narrow-bandgap semiconductor materials, such as HgCdTe, InSb, etc., and use the photoelectric effect to realize the conversion of infrared light signals into electrical signals; therefore, they need to work at a temperature of 77K or lower, which requires bulky and complicated Refrigeration equipment is diff...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G01J5/20B81B7/02B81C1/00
Inventor 何伟明安杰薛惠琼焦斌斌欧毅陈大鹏
Owner 北京中科微投资管理有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products