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Electronic component, semiconductor package and electronic device

A technology for electronic components and semiconductors, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve problems such as reduced reliability, reduced adhesion, and reduced work efficiency

Inactive Publication Date: 2009-06-10
RENESAS ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In the connection structure of the related art, when copper with a thickness of about 1 μm is used as an intermediate metal layer between the electrode pad and the solder bump, most of the copper diffuses into the solder bump during the reflow operation, thereby disadvantageously Causes problems with reduced adhesion between the intermediary metal layer and solder bumps, thus resulting in reduced reliability
In addition, when nickel, which is a magnetic material, is formed in the intermediate metal layer by sputtering or other methods, there is a problem of lowered work efficiency

Method used

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  • Electronic component, semiconductor package and electronic device
  • Electronic component, semiconductor package and electronic device
  • Electronic component, semiconductor package and electronic device

Examples

Experimental program
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Effect test

no. 1 approach

[0137] as in figure 1 As shown in , in one example of the electronic component 1 according to the present invention, a UBM (barrier metal layer) 3 is formed on an electrode pad 2 made of, for example, Al, Cu, and Ag formed on a substrate or a semiconductor element. The electrode pads are electrically connected to wirings in the substrate or semiconductor element.

[0138] UBM3 has any one of the following alloy layers formed at least on the side opposite to the side in contact with the electrode sheet: (1) a CuNi alloy layer containing 15 to 60 atomic % of Cu and 40 to 85 atomic % of Ni, ( 2) A CuNiP alloy layer containing Cu equal to or higher than 15 atomic %, Ni equal to or higher than 40 atomic %, and P higher than 0 atomic % and equal to or lower than 25 atomic %, or (3) containing 44 A CuNiP alloy layer having up to 60 atomic % of Cu, 29 to 40 atomic % of Ni, and 8 to 16 atomic % of P, while the Ni content (on an atomic basis) is at least 2.5 times the P content (on an...

no. 2 approach

[0209] In addition to the above structure, the electronic component of the present invention can also have a structure containing more than two layers: such as Figure 10 As shown in , an electrode sheet 2 made of Al, Cu, Ag or other elements, and a CuNi alloy layer or a CuNiP alloy layer 3 , with an intermediate layer 9 between the electrode sheet 2 and the alloy layer 3 . In this case, the composition of the top barrier metal layer attached to the CuNiSn alloy layer must be CuNi alloy or CuNiP alloy.

[0210] Examples of the material of the intermediate layer 9 may include Ni, Cu, Pd, Pt, Fe, Co, Cr, and Ti, and NiP alloys, NiB alloys, and CoP alloys containing any of the above metals. The above alloy in the intermediate layer has the following composition:

[0211] -NiP alloy: NiP alloy containing 2 to 25 atomic % of P

[0212] -NiB alloy: NiB alloy containing 1 to 10 atomic % of B

[0213] -CoP alloys: CoP alloys containing 2 to 25 atomic % of P

[0214] One reason for...

no. 3 approach

[0218] Electronic parts that have been described in the present invention refer to general components forming circuits, such as those formed on printed substrates, flexible substrates, ceramic substrates, glass-ceramic substrates, and semiconductor substrates, as well as chip capacitors and chip resistors.

[0219] The semiconductor package of the present invention has electronic components electrically connected by UBM, solder bumps, and the like. Examples of electronic components may include substrates such as motherboard substrates, interposer substrates, semiconductor packages, printed substrates, flexible substrates, ceramic substrates, glass-ceramic substrates, and semiconductor substrates, and semiconductor chips (semiconductor elements). Examples of connections between these electronic components may include substrate-to-substrate connections, semiconductor element-to-semiconductor element connections, and substrate-to-semiconductor element connections.

[0220] Figu...

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Abstract

In a conventional UBM made of, for example, Cu, Ni, or NiP, there has been a problem that when an electronic component is held in high-temperature conditions for an extended period, the barrier characteristic of the UBM is lost and the bonding strength decreases due to formation of a brittle alloy layer at a bonding interface. The present invention improves the problem of decrease in long-term connection reliability of a solder connection portion after storage at high temperatures. The electronic component comprises an electrode pad formed on a substrate or a semiconductor element and a barrier metal layer formed to cover the electrode pad and the barrier metal layer comprises a CuNi alloy layer on the side opposite the side in contact with the electrode pad, the CuNi alloy layer containing 15 to 60at% of Cu and 40 to 85at% of Ni.

Description

technical field [0001] The present invention relates to an electronic component, a semiconductor package and an electronic device including a barrier metal layer on an electrode pad. Background technique [0002] In connection with higher performance electronic devices in recent years, there has been an increasing need for higher density packaging in semiconductor packages. In one example of a method for providing such a high-density semiconductor package, solder bumps are formed on electrode pads on the surface of an LSI chip, and flip-chip connection is used to connect the LSI chip to an interposer substrate or A motherboard such as a build-up substrate is connected to a flexible substrate, or is connected to another LSI chip. [0003] Generally, when solder bumps made of, for example, SnPb, SnAg, SnCu, SnAgCu, SnZn, SnZnBi, and SnIn are used in flip-chip connection, Sn, which mainly makes solder bumps, is , or when the product is used at a high temperature, it diffuses ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/60H01L23/52H01L21/3205
CPCH01L2224/81455H01L2224/1132H01L24/81H01L2224/05157H01L2924/3512H01L23/49816H01L2224/05082H01L2924/01047H01L2224/81815H01L2924/3651H01L2924/15311H01L2924/014H01L2224/05084H01L21/4853H01L2224/05164H01L2924/01029H01L2224/1145H01L2224/05118H01L2224/73204H01L2924/09701H01L2224/75702H01L2224/05166H01L23/3128H01L2924/01079H01L2224/05647H01L2224/81447H01L2224/13022H01L24/13H01L2224/05171H01L2224/03464H01L2924/19041H01L2224/05073H01L23/24H01L2924/01022H01L2924/01006H01L23/49866H01L2224/115H01L2224/16225H01L2224/05571H01L2224/05169H01L2924/01074H01L2924/01002H01L2224/11849H01L2924/0103H01L24/75H01L2224/1147H01L2924/01027H01L24/03H01L2224/03828H01L2224/0401H01L24/05H05K3/3436H01L2224/11462H01L2924/0105H01L2224/03462H01L2224/83104H01L2924/01007H01L2224/11502H01L2224/0345H01L2224/8121H01L2224/0362H01L2224/05147H01L2924/01013H01L2924/01005H01L2924/01082H01L2924/01033H01L2924/01028H01L2924/01046H01L2224/0516H01L2224/32225H01L21/4846H01L2924/01015H01L24/16H01L2224/11436H01L2224/13006H01L2924/01327H01L2224/05155H01L2224/05083H01L21/563H01L24/11H01L2924/01078H01L2924/19043H01L2224/1152H01L2924/01011H01L2224/05655H05K3/3463H05K3/244H01L2924/01024H01L2224/13111H01L2924/00014H01L2924/0002H01L2924/15787H01L2924/181H01L2924/00H01L2224/05552H01L2924/00012
Inventor 曾川祯道山崎隆雄高桥信明
Owner RENESAS ELECTRONICS CORP
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