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Production method for ternary ferroelectric polymer thin-film material

A technology of ferroelectric polymers and ternary polymers, which is applied to fixed capacitance parts, thin film/thick film capacitors, stacked capacitors, etc., and can solve problems such as unclear origin mechanisms

Inactive Publication Date: 2009-07-01
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The mechanism of origin of this relaxed property is not well understood, and further performance improvements must be understood in terms of the physical origin of this relaxed ferroelectric property
However, there is no report on the growth of P(VDF-TrFE-CFE) ternary ferroelectric polymer films by LB technology.

Method used

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  • Production method for ternary ferroelectric polymer thin-film material

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Comparison scheme
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Embodiment Construction

[0019] 1. Preparation of P(VDF-TrFE-CFE) ternary ferroelectric polymer precursor solution

[0020] Weigh 0.01g terpolymer P (60%VDF-33%TrFE-7%CFE) in a 250ml flask, add 100ml dimethyl sulfoxide, stir at 60°C for 3 hours, leave it for 24 hours, wait use.

[0021] 2. Horizontal growth of ternary ferroelectric polymer LB films

[0022] Take 4ml of the precursor solution with a syringe, and then evenly drop it in the deionized water tank of the Nima311D LB film growth system. After standing for 1 hour, make the side of the glass substrate with the metal Al electrode layer and the surface of the deionized water float The precursor solution was contacted, and the film was horizontally transferred to the Al electrode layer under the surface pressure of 5mN / m, and pulled repeatedly for 30 times, and then the film was placed in an oven and annealed at 125°C for 5 hours, and finally the thickness of the film was 40-50nm. In between, evaporate the Al film on it as the upper electrode, ...

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Abstract

The invention discloses a preparing process of ternary ferroelectric polymer film material, which comprises preparing a precursor solution by using dimethyl sulfoxide as solvent and ternary polymer P (VDF-TrFE-CFE) as solute, and adopting horizontal dipping method to create films and heat-treat films on LB devices, thereby obtaining polymer films which are characterized by controllable nanometer scale, ordered arrangement level and high crystallinity. The film material processed according to the method provides a platform for studying the origin of relaxation ferroelectricity. The P (VDF-TrFE-CFE) ternary ferroelectric polymer films have the properties for studying practical energy memory devices.

Description

technical field [0001] The invention relates to a ferroelectric polymer film material, in particular to a method for preparing a high energy density ternary ferroelectric polymer film material grown by Langmuir-Blodgett (LB) technology. Background technique [0002] The market for organic film capacitors is huge, requiring nearly 100 billion pieces each year, and the market for capacitors using polyvinylidene fluoride (PVDF for short) as a dielectric material is also growing. The copolymer of polyvinylidene fluoride and trifluoroethylene is referred to as: P(VDF-TrFE), which is an excellent ferroelectric material. In addition to being used as a traditional electric heater material, this polymer material has high energy density and resistance Because of its high breakdown electric field, it can be used to prepare energy storage capacitors with broad application prospects. Recently, it has been reported that a chlorofluoroethylene polymer (PCFE) was introduced into P(VDF-TrFE...

Claims

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Application Information

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IPC IPC(8): H01G4/33H01G4/14C08J5/18
Inventor 褚君浩孟祥建林铁孙璟兰韩莉
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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