Preparation method for nano SiO2 lattice on 316L stainless steel surface

A stainless steel and nanotechnology, applied in the field of preparation of nano-SiO2 lattices on the surface of 316L stainless steel, can solve the problems of wear resistance, corrosion resistance, lack of biological activity, etc. uniform effect

Inactive Publication Date: 2016-01-06
DONGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although 316LSS has excellent comprehensive performance, there are still unavoidable problems and deficiencies in long-ter

Method used

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  • Preparation method for nano SiO2 lattice on 316L stainless steel surface
  • Preparation method for nano SiO2 lattice on 316L stainless steel surface
  • Preparation method for nano SiO2 lattice on 316L stainless steel surface

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] (1) Preparation of 316LSS surface nano-pit array: 316LSS is mixed in a mixture of perchloric acid and ethylene glycol (V:V=1:15), the system solution temperature is 10℃, 20V anodization is 15min, and the pit diameter is 50nm.

[0036] (2) SiO 2 Preparation of sol: mix 11.60mL of deionized water with 0.1ml of 2mol / L nitric acid, stir to make it uniform, and then add dropwise nitric acid acidified aqueous solution to 21.33mL of ethyl orthosilicate while stirring. Continue, the stirring time is 30min, the stirring temperature is 40℃, and finally SiO is formed 2 Sol; (The volume ratio of ethyl orthosilicate, deionized water and nitric acid is 1:0.54:0.005)

[0037] (3) SiO 2 The viscosity of the sol is 0.001 Pa·s, and it is dropped into a small glass bottle containing 316LSS with a nano-pit array on the surface at 20°C, the diameter of the sol is 50 nm, and it is allowed to stand for 24 hours.

[0038] (4) Take out the obtained sample, rinse it repeatedly with deionized water and...

Embodiment 2

[0044] (1) Preparation of 316LSS surface nano-pit array: 316LSS was anodized in a mixture of perchloric acid and ethylene glycol (V:V=1:19) at 2°C and 40V for 11min, and the pit diameter was 70nm.

[0045] (2) SiO 2 Preparation of the sol: mix 13.7mL of deionized water with 0.15ml of 2mol / L nitric acid, stir to make it uniform, and then add dropwise nitric acid acidified aqueous solution to 17.4mL of methyl orthosilicate while stirring. Continue, stirring time is 40min, stirring temperature is 20℃, and finally SiO is formed 2 Sol (the volume ratio of ethyl orthosilicate, deionized water and nitric acid is 1:0.79:0.009).

[0046] (3) SiO 2 The viscosity of the sol is 0.002Pa·s, and it is dropped into a small glass bottle containing 316LSS with a nano-pit array on the surface at 30°C, the pit diameter is 70nm, and it is left to stand for 18h.

[0047] (4) Take out the obtained sample, wash it repeatedly with deionized water and ethanol for several times, and then dry it at 140°C for 1 ...

Embodiment 3

[0050] (1) Preparation of 316LSS surface nano-pit array: 316LSS was anodized in a mixture of perchloric acid and ethylene glycol (V:V=1:25) at 0°C and 70V for 30s, and the pit diameter was 150nm.

[0051] (2) SiO 2 Preparation of sol: mix 27.4mL of deionized water with 0.5ml of 2mol / L nitric acid, stir to make it uniform, and then add dropwise nitric acid acidified aqueous solution to 27.4mL of ethyl orthosilicate while stirring. Continue, the stirring time is 30min, the stirring temperature is 5℃, and finally SiO is formed 2 Sol (the volume ratio of ethyl orthosilicate, deionized water and nitric acid is 1:1:0.018).

[0052] (3) SiO 2 The viscosity of the sol is 0.002Pa·s, and it is dropped into a small glass bottle containing 316LSS with a nano-pit array on the surface at 30°C, the diameter of the sol is 150nm, and it is left for 4h.

[0053] (4) Take out the obtained sample, wash it repeatedly with deionized water and ethanol for several times, and then dry it at 65°C for 8 hours....

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Abstract

The invention relates to a preparation method for a nano SiO2 lattice on a 316L stainless steel surface. The preparation method comprises the following steps: carrying out anodic oxidization, in ethylene glycol electrolyte of perchloric acid, on 316L stainless steel, thereby obtaining 316L stainless steel with a nano hole array on surface; adding 2mol/L nitric acid into deionized water to obtain a mixture I, stirring the mixture I, adding the mixture I into a silicon source while stirring, and carrying out stirring reaction on the mixture I, thereby obtaining SiO2 sol; dropwise adding the SiO2 sol into the 316L stainless steel with the nano hole array on surface at 5-40 DEG C to obtain a mixture II, cleaning the mixture II, drying the mixture II, and roasting the mixture II under a protective atmosphere to obtain the nano SiO2 lattice on the 316 stainless steel surface. The preparation method is simple and effective, environmentally-friendly and low in cost; and obtained SiO2 nano particles are uniform in particle diameter, and are ordered in distribution; and the nano SiO2 lattice is regular and ordered in structure and high in density.

Description

Technical field [0001] The invention belongs to nano SiO 2 In the field of dot matrix, especially related to a kind of 316L stainless steel surface nano SiO 2 Preparation method of lattice. Background technique [0002] The planar two-dimensional lattice structure of inorganic materials has potential application prospects in biology, medicine, biosensing, detection and other fields (JHAmanda, ChangLeietal.[J].Phys.Chem.B,2005,127,2264-2271). [0003] At present, the commonly used preparation methods of inorganic material nano-lattice include etching method, template method, and self-assembly. The etching method is feasible in principle, but it is difficult to achieve large-scale due to expensive equipment and low efficiency. The patent "A method for preparing a two-dimensional hexagonal lattice array structure of honeycomb nanoparticles" (CN101774536A) discloses a method for preparing hexagonal lattice nano silver. The method first prepares a single-layer polystyrene nanosphere h...

Claims

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Application Information

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IPC IPC(8): C25D11/34C23C18/12B82Y40/00
Inventor 倪似愚杨朋安刘玉昆
Owner DONGHUA UNIV
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