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Image sensor using back-illuminated photodiode and method of manufacturing the same

一种光电二极管、图像传感器的技术，应用在图像传感器领域，能够解决费时、硅衬底表面缺陷噪声、费用高等问题

Active Publication Date: 2009-07-01
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the problem is that heat treatment cannot be achieved at high temperature due to the presence of metal wires
[0007] Therefore, conventional image sensors using back-illuminated photodiodes cannot solve the problem of noise caused by surface defects of the silicon substrate on which the back-illuminated photodiodes are formed.
[0008] In order to solve the above problems, laser scanning is usually used for instantaneous high-temperature heat treatment, but its disadvantage is that it is expensive and time-consuming

Method used

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  • Image sensor using back-illuminated photodiode and method of manufacturing the same
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  • Image sensor using back-illuminated photodiode and method of manufacturing the same

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Embodiment Construction

[0022] In the following, the embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0023] figure 1 is a cross-sectional view of an image sensor structure using a back-illuminated photodiode according to one embodiment of the present invention. The image sensor consists of a specific type of wafer 10, epitaxial layers 20, barriers 30, back-illuminated photodiodes 40, intermetal dielectric (IMD) layers 50, metal lines 60, pads 70, vias and connectors 75, blunt layer 80, color filter 82 and microlens 84.

[0024] A potential barrier 30 is formed on the surface of the epitaxial layer 20 at a low concentration by doping with an impurity of the same type as that of the epitaxial layer 20 but with a higher concentration.

[0025] Barrier 30 may be formed using ion implantation, epitaxial growth, or borosilicate glass (BSG) deposition.

[0026] The backside illuminated photodiode 40 is formed on the epitaxial layer 20 formed...

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Abstract

An image sensor using a back-illuminated photodiode and a manufacturing method thereof are provided. According to the present invention, since a surface of the back-illuminated photodiode can be stably treated, the back-illuminated photodiode can be formed to have a low dark current, a constant sensitivity of blue light for all photodiodes, and high sensitivity. In addition, it is possible to manufacture an image sensor with high density by employing a three dimensional structure in which a photodiode and a logic circuit are separately formed on different substrates.

Description

technical field [0001] The present invention relates to an image sensor, and more particularly, to an image sensor using a back-illuminated photodiode that absorbs light through a bottom side and a manufacturing method thereof. Background technique [0002] A Complementary Metal Oxide Semiconductor (CMOS) image sensor is a device that measures light intensity. Generally, such an image sensor has a structure in which a photodiode is formed on a flat panel forming a digital / analog circuit, and a metal line and an inter-metal dielectric (inter-metal dielectric) are formed on the top side of the photodiode. IMD) layer. [0003] In a traditional image sensor, light first passes through microlenses and color filters, then travels along a channel formed by several layers of thin films, and is finally absorbed by photodiodes. In the process, light sensitivity, especially to blue light, is impaired. [0004] Also, in conventional image sensors, light is reflected by multiple layer...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H04N25/00
CPCH01L27/14636H01L27/14627H01L27/14621H01L27/1464H01L27/14632H01L27/14687H01L27/146
Inventor 李炳洙元俊镐
Owner SK HYNIX INC