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Non-balance magnetron sputtering thin film deposition apparatus for cusped magnetic field confined ICP reinforced ionization

A thin film deposition device and magnetron sputtering technology, which are applied in sputtering coating, ion implantation coating, metal material coating process, etc. The uniformity of volume space distribution and limited improvement can achieve the effect of reducing diffusion loss, reducing radiation damage and improving uniformity.

Inactive Publication Date: 2009-07-08
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But overall, this technology is still insufficient, because its improvement on the above problems is still limited, and it does not solve the problem of uniformity of sputtering discharge plasma space, which is not conducive to the preparation of large uniform area film

Method used

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  • Non-balance magnetron sputtering thin film deposition apparatus for cusped magnetic field confined ICP reinforced ionization

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0020] Select argon (purity 99.999%) as the working gas, and the working pressure is 1.5×10 -1 Pa, the sputtering target is a copper target.

[0021] 1. Install the sputtering copper target, close the vacuum chamber, and start vacuuming to 3×10 -3 Pa.

[0022] 2. Start the magnetron sputtering discharge. When the applied magnetron sputtering voltage is greater than 300V, the gas will be broken down to form a magnetron sputtering discharge. The DC discharge current can reach 200mA. Execute for a period of time to make the discharge stable.

[0023] 3. Open the vacuum chamber, place the cleaned monocrystalline silicon with a size of 20×20 mm on the sample stage, close the vacuum chamber, and start vacuuming to 3×10 -3 Pa, then pass argon to a vacuum of 1.5×10 -1 Pa.

[0024] 4. Turn on the ICP discharge to make the RF input power reach 200W.

[0025] 5. Apply a pulse bias voltage on the sample stage, the pulse peak voltage is 1500V, the pulse frequency is 1.0kHz, the duty r...

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Abstract

The invention relates to a non-equilibrium magnetron sputtering film depositing device of a cusped magnetic field for restricting ICP enhancing ionization which belongs to the plasm film depositing technique field. The device has characteristic that a main body of the device is a non-equilibrium magnetic control; ICP enhance ionization discharge is added between the non-equilibrium magnetic control sputter target for increasing ionization degree of the magnetic control sputter product; three rings annular permanent magnets are added under the non-equilibrium magnetic control sputter target and is closed with the non-equilibrium magnetic control sputter magnetic field for generating a close magnetic field distribution along a discharge chamber wall which can restrict discharge plasm efficiently, increase ionization degree of the magnetic control sputter product and improve uniformity of discharge plasm space distribution. The device has advantages that the device can prepare a film with high quality based on improving density and space distribution uniformity of the non-equilibrium magnetic control sputter discharge plasm.

Description

technical field [0001] The invention belongs to the technical field of unbalanced magnetron sputtering thin film deposition, and relates to an unbalanced magnetron sputtering thin film deposition device with tangent magnetic field confined inductively coupled radio frequency plasma (ICP) enhanced ionization. Background technique [0002] Plasma thin film deposition is a widely carried out research field, and has been more and more widely used. It can be applied to the preparation of optical films, conductive films, magnetic films, insulating films, filter films, hard films, etc., resulting in good economic and social benefits. Low-temperature plasma technology is used in plasma thin film technology. The temperature of low-temperature plasma is usually room temperature, and electrons have high energy and temperature, so they can perform extraordinary physical transformations and chemical reactions in conventional environments. It provides reliable conditions for the preparat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35
Inventor 任春生张家良王德真王友年
Owner DALIAN UNIV OF TECH
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