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Implementing method for self-stripping thick film gallium nitride from substrate sapphire

An implementation method, a sapphire technology, applied in chemical instruments and methods, inorganic chemistry, gallium/indium/thallium compounds, etc., can solve the problem of difficult to retain nano-GaN voids, and overcome the extremely easy cracking, uniform distribution, etc. The effect of improving crystal quality

Inactive Publication Date: 2009-07-22
DAHOM FUJIAN ILLUMINATION TECH
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Problems solved by technology

However, due to the fast growth rate of HVPE, it is difficult to completely retain the voids in nano-GaN after growth like MOCVD. The limitation of this method is that the separation of thick-film GaN and sapphire substrate still needs to be separated. craft

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  • Implementing method for self-stripping thick film gallium nitride from substrate sapphire

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Embodiment Construction

[0025] The substantive features and remarkable progress of the present invention will be further elaborated below through the introduction of specific embodiments.

[0026] The method for self-stripping of thick-film gallium nitride and substrate sapphire according to the present invention comprises the following steps:

[0027] A. First, make GaN with a passivation layer super large nano-aperture structure as a thick-film GaN growth template. The manufacturing steps are:

[0028]①Use HVPE, MOCVD or molecular beam epitaxy to grow about 3 micron GaN film on the (001) sapphire substrate, and use this film as HVPE template; ②Then the template is deposited by electron beam evaporation at a temperature of 200°C A thin layer of metal Al with a thickness of 300nm; ③put the template with the Al layer into the oxalic acid solution (0.3mol / L), and carry out anodic oxidation at room temperature with a voltage of 40 volts for about 15min, then the metal Al is electrochemically corroded P...

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Abstract

The invention relates to a method to realize automatic stripping between thick film gallium nitride and substrate sapphire. The method is characterized in that super large nanometer aperture GaN with a passivation layer is adopted as a film board of the thick film. Before growing thick film GaN, a layer of GaN thin film is deposited on surface (0001) sapphire substrate, then a layer of metal Al is evaporated on the substrate and vesicular anodic aluminium oxide (AAO) is formed by an electrochemical method, afterwards, the anodic aluminium oxide is etched into vesicular shape, then a layer of medium SiO2 or a SiNx film is deposited into apertures of multiaperture GaN, as a result, a super large nanometer aperture structure with the passivation layer is obtained on the GaN film board, after being cleaned, the multiaperture substrate is placed in an HVPE reaction cavity for growing GaN thick film. The method provided by the invention avoids the complicated procedures in manufacturing masking films by etching and downsizes pore size to nano level, in addition, a metal Al layer and a Sio2 layer can both be manufactured by methods such as electron beam evaporation and sputtering and the like.

Description

technical field [0001] The invention relates to a method for self-stripping between thick-film gallium nitride (GaN) and sapphire substrate. The invention aims to solve the problem that the thick-film GaN is difficult to separate from the substrate sapphire and is easy to break, and at the same time improve the quality of the GaN material grown by epitaxial growth, and belongs to the technical field of GaN material preparation. Background technique [0002] GaN material has excellent characteristics such as high luminous efficiency, high thermal conductivity, high temperature resistance, radiation resistance, acid and alkali resistance, high strength and high hardness. In recent years, it has been regarded as one of the most advanced semiconductor materials in the world and has attracted much attention. The resulting high-efficiency blue, green, purple, and white light-emitting diodes and lasers have been widely used. However, GaN is generally deposited on sapphire substrat...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/78H01L21/20H01L21/3065H01L21/311C01G15/00
Inventor 王新中于广辉林朝通曹明霞卢海峰李晓良巩航齐鸣李爱珍
Owner DAHOM FUJIAN ILLUMINATION TECH