Resistance variable oxide material Co3O4 thin film, preparation and use thereof

Abstract

The invention relates to a cobalt oxide film of interrupted oxide material, which is in a polycrystal state and has a chemical formula of Co3O4 and a thickness of 200nm. The preparation method comprises the following steps: (1), preparing ceramic target material of CoOx (x is larger than 0 and less than 4 / 3); (2), fixing the target material of CoOx on a target, fixing a substrate on a substrate platform and arranging the target and the substrate platform in a growth chamber; (3), vacuumizing the growth chamber by a mechanical pump and a molecular pump, closing the mechanical pump, opening an inlet valve and pumping oxygen to the growth chamber until oxygen pressure is 20Pa; (4), focusing laser beams of a laser on the target material of CoOx by a lens; (5), heating the substrate platform by a resistance furnace so that the temperature of the substrate reaches a temperature of 660 DEG C; and (6), confirming sedimentation time according to single-pulse energy to sedimentate the film of Co3O4 with the thickness of 200nm on the substrate. The film is used to prepare a nonvolatile interrupted memory storage element which adopts a sandwich structure as a basic configuration, i.e., a polycrystal oxide film of Co3O4 is sedimentated on a Pt electrode film of a lower electrode, and a Pt probe is used as an upper electrode to form a memory unit.

Description

1. Technical field [0001] The invention relates to the field of microelectronic materials, in particular to a resistive variable oxide Co 3 o 4 Thin film and preparation method and its application in the preparation of high-density non-volatile resistive memory device capable of fast reading and writing. 2. Background technology [0002] Information processing system and information storage system are two basic systems that constitute a computer. Currently used information storage systems include volatile memory and non-volatile memory. Volatile memory is mostly used for internal storage of computer systems, and data cannot be saved without power support. Non-volatile memory can save the original data when there is no power support, so it is widely used for data storage in information systems, such as computers, digital equipment, industrial control equipment, etc. The currently used non-volatile magnetic media memory cannot achieve fast reading and writing, and the reco...

AI Technical Summary

Problems solved by technology

The currently used non-volatile magnetic media memory cannot achieve fast reading and writing, and the recording density is difficult to further increase due to the mechanical movement of the magnetic head and the recording medium during the reading and writing process.

The storage speed of Flash electronic storage technology is better than that of magnetic media storage, but its reliability in harsh environments is poor, and the speed is not ideal

In addition, there are ferroelectric memory (FeRAM) under research, M-RAM based on spintronic materials, etc., which have not yet been widely used due to their respective weaknesses.

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