Resistance variable oxide material Co3O4 thin film, preparation and use thereof

An oxide and thin film technology, applied in the field of microelectronic materials, can solve the problems of poor reliability, not yet used in large quantities, and difficult to further improve the recording density, and achieve the effect of uniform thickness

Inactive Publication Date: 2009-08-05
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The currently used non-volatile magnetic media memory cannot achieve fast reading and writing, and the recording density is difficult to further increase due to the mechanical movement of the magnetic head and the recording medium during the reading and writing process.
The storage speed of Flash electronic storage

Method used

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  • Resistance variable oxide material Co3O4 thin film, preparation and use thereof
  • Resistance variable oxide material Co3O4 thin film, preparation and use thereof
  • Resistance variable oxide material Co3O4 thin film, preparation and use thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] Example 1. Preparation of CoO x (0x Ceramic target.

Embodiment 2

[0044] Example 2. Preparation of polycrystalline Co 3 o 4 Thin film, its preparation steps are as follows:

[0045] a) The sintered CoO x The target 4 is fixed in a pulsed laser deposition film forming system (such as figure 1 Shown) on the target stage 5, the substrate 1 is fixed on the substrate stage 8, and they are all located in the growth chamber 6 of the pulsed laser deposition film forming system;

[0046] b) sequentially use a mechanical pump and a molecular pump to vacuum the growth chamber 6 to about 8.0×10 -4 Pa. After turning off the molecular pump, open the needle inlet valve to feed oxygen into the growth chamber. Adjust the oxygen pressure in the growth chamber to 20Pa by adjusting the intake valve.

[0047] c) Start the KrF excimer laser 2 to focus the laser beam on the CoO through the focusing lens 3 x on target 4;

[0048] d) Heating the substrate table with a resistance furnace, Pt / Ti / SiO 2 / Si(111) substrate temperature reaches the set temperature...

Embodiment 3

[0050] Example 3. Using variable Co 3 o 4 A method for preparing a resistive memory element from a thin film, the preparation steps are as follows:

[0051] On Pt / Ti / SiO 2 / Si(111) substrate with a thickness of about 200 nm of Co 3 o 4 Thin film, during the deposition process, press a corner with a press clip, so that the leaked part of the Pt lower electrode film is used as the lower electrode. After taking it out, put it on the probe station, and carefully probe the upper electrode through the auxiliary microscope of the probe station. Ride on Co 3 o 4 On the film, a miniature sandwich structure is formed, which is a memory unit.

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PUM

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Abstract

The invention relates to a cobalt oxide film of interrupted oxide material, which is in a polycrystal state and has a chemical formula of Co3O4 and a thickness of 200nm. The preparation method comprises the following steps: (1), preparing ceramic target material of CoOx (x is larger than 0 and less than 4/3); (2), fixing the target material of CoOx on a target, fixing a substrate on a substrate platform and arranging the target and the substrate platform in a growth chamber; (3), vacuumizing the growth chamber by a mechanical pump and a molecular pump, closing the mechanical pump, opening an inlet valve and pumping oxygen to the growth chamber until oxygen pressure is 20Pa; (4), focusing laser beams of a laser on the target material of CoOx by a lens; (5), heating the substrate platform by a resistance furnace so that the temperature of the substrate reaches a temperature of 660 DEG C; and (6), confirming sedimentation time according to single-pulse energy to sedimentate the film of Co3O4 with the thickness of 200nm on the substrate. The film is used to prepare a nonvolatile interrupted memory storage element which adopts a sandwich structure as a basic configuration, i.e., a polycrystal oxide film of Co3O4 is sedimentated on a Pt electrode film of a lower electrode, and a Pt probe is used as an upper electrode to form a memory unit.

Description

1. Technical field [0001] The invention relates to the field of microelectronic materials, in particular to a resistive variable oxide Co 3 o 4 Thin film and preparation method and its application in the preparation of high-density non-volatile resistive memory device capable of fast reading and writing. 2. Background technology [0002] Information processing system and information storage system are two basic systems that constitute a computer. Currently used information storage systems include volatile memory and non-volatile memory. Volatile memory is mostly used for internal storage of computer systems, and data cannot be saved without power support. Non-volatile memory can save the original data when there is no power support, so it is widely used for data storage in information systems, such as computers, digital equipment, industrial control equipment, etc. The currently used non-volatile magnetic media memory cannot achieve fast reading and writing, and the reco...

Claims

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Application Information

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IPC IPC(8): C30B29/16C30B28/14H01L21/363C23C14/28C23C14/08
Inventor 殷江高旭季剑锋夏奕东刘治国
Owner NANJING UNIV
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