ABO3/MgO/GaN heterojunction structure and preparation method thereof

A heterogeneous structure and thin film technology, applied in the field of microelectronic materials, to achieve the effects of reducing device power consumption, protection performance, and reducing gate leakage current

Inactive Publication Date: 2009-09-09
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • ABO3/MgO/GaN heterojunction structure and preparation method thereof
  • ABO3/MgO/GaN heterojunction structure and preparation method thereof
  • ABO3/MgO/GaN heterojunction structure and preparation method thereof

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[0034] ABO of this embodiment 3 / MgO / GaN heterostructure has three layers, on the substrate substrate and ABO 3 Between, there is a MgO nano-buffer layer thin film, and the substrate substrate is GaN or GaN covered with 20nm AlGaN.

[0035] Further, GaN or AlGaN is oriented in the (0001) direction. MgO films are oriented along the (111) direction. ABOs 3 In the metal oxide, A is an element of Mg, Ca, Sr, Ba, Pb, Bi, La, and B is an element of Ti, Zr, Fe, Ru, Ni;

[0036] A can also be a solid solution composed of two or more elements in Mg, Ca, Sr, Ba, Pb, Bi, La, and B is two or more elements in Ti, Zr, Fe, Ru, Ni The solid solution constituted, and, based on the molar ratio of A element, B element and oxygen element, the stoichiometric ratio satisfies (A 1 +A 2 +...+An): (B 1 +B 2 +...+Bn):O=1:1:3.

[0037] The ABO 3 Metal oxides can be doped with a certain proportion of modified oxides, namely RE A oxide or RE B oxides, the stoichiometric ratio satisfies (A 1 +...

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Abstract

The invention discloses ABO3/MgO/GaN heterojunction structure and a preparation method thereof, and relates to the field of microelectronic material. The ABO3/MgO/GaN heterojunction structure comprises a substrate and ABO3, wherein, an MgO nano buffer layer film is arranged between the substrate and the ABO3, the substrate is GaN epitaxial slice, and the ABO3 is oxide film material with calcium-state structure. The MgO film has good thermal stability and can be combined with oxygen stably, so as to be an effective blocking layer for preventing oxygen atoms from spreading towards the semiconductor substrate; meanwhile, MgO has the cubic symmetry crystalline structure with the crystallographic lattice constant approaching to most of ferroelectric oxide; the MgO film with nano thickness leads a ferroelectric film with the ABO3 structure which grows subsequently can grow on the GaN in an oriented way. The ABO3/MgO/GaN heterojunction structure prepared by the invention has clear interlayer interfaces, thus providing a feasible material design and growing method for realizing oxide/semiconductor integrated devices.

Description

technical field [0001] The invention relates to the field of microelectronic materials, in particular to a film and preparation technology for interface control and growth orientation applied in the integration of perovskite-structured oxides and GaN wide-bandgap semiconductors. Background technique [0002] GaN-based semiconductors are typical third-generation wide-bandgap semiconductors, which have the characteristics of large bandgap, high breakdown electric field, high thermal conductivity, high carrier mobility, and strong radiation resistance. They are widely used in microelectronics and optoelectronic devices. has a wide range of applications. Since GaN has a certain piezoelectric polarization and spontaneous polarization, the AlGaN / GaN structure can form a concentration as high as 10 without doping. 13 cm -2 two-dimensional electron gas. Therefore, GaN-based materials have extremely broad application prospects in the fields of high-power density, high-frequency, a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/04H01L29/12H01L21/31
Inventor 朱俊罗文博王小平李言荣
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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