Welding structure and method of target and backing plate
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- KONFOONG MATERIALS INTERNATIONAL CO LTD
- Publication Date
- 2009-09-23
- Estimated Expiration
- Not applicable · inactive patent
Smart Images
Figure 1 Figure 2 Figure 3
Abstract
Description
technical field
[0001] The invention relates to the field of semiconductor manufacturing, in particular to a welding structure and method of a target material and a back plate. Background technique
[0002] In the manufacture of large-scale integrated circuits, the target component is composed of a target that meets the sputtering performance and a back plate that is combined with the target and has a certain strength. The back plate can play a supporting role when the target assembly is assembled to the sputtering base station, and has the effect of conducting heat.
[0003] At present, the process of welding the target material and the back plate usually adopts a hot isostatic pressing (HIP) diffusion welding process. The hot isostatic pressing process is a process method that uses uniform static pressure in all directions to press at high temperature. This method uses a metal or ceramic sheath (low carbon steel, Ni, Mo, glass, etc.), and uses nitrogen or argon as a pres...