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Method for synthesizing tellurium-contained semiconductor nanocrystal

A synthesis method and semiconductor technology, applied in the fields of selenium/tellurium compounds, chemical instruments and methods, inorganic chemistry, etc., can solve the problems of toxic, flammable and explosive, and reduce the cost of synthesizing nanocrystals, and achieve easy operation, cost saving, and improvement of The effect of synthesis efficiency

Inactive Publication Date: 2009-10-14
南京紫同纳米科技有限公司
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  • Claims
  • Application Information

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Problems solved by technology

In 2000, Peng et al. discovered a relatively cheap, inorganic, and relatively less toxic method to synthesize nanocrystals, that is, cadmium oxide (CdO) was used instead of methyl cadmium (Cd(CH 3 ) 2 ) to synthesize nanocrystals such as CdTe, which further reduces the cost of synthesizing nanocrystals; however, Peng et al. and other groups have been using tributylphosphine (tributylphosphine, TBP) or trioctylphosphine (trioctylphosphine) when synthesizing tellurium precursors , TOP) dissolving tellurium as the precursor of tellurium, this method has application limitations because tributylphosphine or trioctylphosphine are toxic, flammable, explosive and relatively expensive drugs

Method used

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  • Method for synthesizing tellurium-contained semiconductor nanocrystal
  • Method for synthesizing tellurium-contained semiconductor nanocrystal
  • Method for synthesizing tellurium-contained semiconductor nanocrystal

Examples

Experimental program
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Embodiment 1-2

[0024] The preparation of embodiment 1-2CdTe nanocrystal

Embodiment 1

[0026] Add 1mmol Te powder to 10g trioctylphosphine oxide TOPO and heat to 380°C under nitrogen atmosphere until Te is completely dissolved to obtain a light yellow solution that is the Te precursor, which is cooled for later use.

[0027] 0.1 mmol of cadmium decacarbonate and 4 g of octadecene were mixed into a 25 mL three-neck flask, and heated to 240° C. (180-350° C. is acceptable) under nitrogen atmosphere to obtain a clear and uniform solution, namely the cadmium precursor.

[0028] Take 1g of Te precursor solution and inject it into the Cd solution at 240°C, and take samples for observation at different times. After reacting for 3 hours, cool down, add methanol to precipitate, and centrifuge to obtain CdTe nanocrystals.

Embodiment 2

[0030] Add 1mmol Te powder to 10g trioctylphosphine oxide TOPO and heat to 380°C under nitrogen atmosphere until Te is completely dissolved to obtain a light yellow solution that is the Te precursor, which is cooled for later use.

[0031] 0.4 mmol of cadmium decacarbonate and 6 g of octadecene were mixed into a 25 mL three-necked flask, and heated to 320° C. (180-350° C. was acceptable) under nitrogen atmosphere to obtain a clear and homogeneous solution, namely the cadmium precursor.

[0032] Take 2g of Te precursor solution and inject it into the Cd solution at 300°C, and take samples for observation at different times. After reacting for 3 hours, cool down, add methanol to precipitate, and centrifuge to obtain CdTe nanocrystals.

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Abstract

The invention relates to a method for synthesizing tellurium-contained semiconductor nanocrystal. The chemical formula of the tellurium-contained semiconductor nanocrystal is shown as CdTexA, wherein x is more than 0 and less than or equal to 1 and A is Se or S; the method comprises the following steps of: preparing a former body; mixing the former body to obtain a reaction solution; leading the reaction solution to react for 1s-3h; and cooling and depositing to obtain the tellurium-contained semiconductor nanocrystal. During the synthesis process, the method uses normal and stable low-toxicity drugs, saves the cost by more than 50%, and has safe operation, easy operation and good repeatability. The fluorescence range of the tellurium-contained semiconductor nanocrystal almost covers from visible light to near infrared light area; and the tellurium-contained semiconductor nanocrystal has uniform dimension distribution, high fluorescence efficiency, narrow half-height width and good photobleaching resistance and has extremely high application value in laboratory and industrial production.

Description

(1) Technical field [0001] The invention belongs to the technical field of synthesis of semiconductor nanocrystals, in particular to a synthesis method of tellurium-containing semiconductor nanocrystals. (2) Background technology [0002] Semiconductor nanoparticles, especially II-VI semiconductor nanoparticles are research hotspots in recent years. Semiconductor nanoparticles are also called semiconductor quantum dots (Quantum Dots, referred to as QDs). Because of their relatively small size, between a few to a dozen nanometers, they have many physical and chemical properties that bulk materials do not have, such as quantum size effect, dielectric confinement effect, surface effect, etc., so that it has broad application prospects in optoelectronic devices, solar cells, and laser biomarkers. In recent years, the research on semiconductor nanocrystals in the visible light-emitting region, especially the application as a biomarker, has attracted the attention of many scienti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/00C09K9/00
Inventor 李林松申怀彬
Owner 南京紫同纳米科技有限公司
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