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High temperature and high voltage experimental device for heating gasket

An experimental device, high temperature and high pressure technology, applied in the direction of applying stable tension/pressure to test material strength, material excitation analysis, Raman scattering, etc., can solve the problems of only reaching 450°C, oxidation damage of diamond anvil, etc., to achieve The effect of simple use, low cost and simple structure

Inactive Publication Date: 2009-10-28
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since this heating method is to heat the entire diamond anvil, if the temperature reaches 500°C, the diamond anvil may be oxidized and damaged, so the temperature in the sample chamber can only reach about 450°C

Method used

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  • High temperature and high voltage experimental device for heating gasket
  • High temperature and high voltage experimental device for heating gasket
  • High temperature and high voltage experimental device for heating gasket

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Embodiment 1 The shape and manufacture of the gasket 1, and the material of the insulating layer 2

[0023] to combine figure 1 The structure of the warming core pad of the present invention will be described. figure 1 Among them, gasket 1 is a T301 stainless steel sheet, which is made by laser cutting technology and fine grinding; the pressure groove in the middle of gasket 1 is pre-pressed by anvil 8 of diamond or white gem; the hole in the center of gasket 1 is used as a sample The heating cavity 4 can be made by artificial drilling. A solid copper wire can be used as the wire 5, and welded to both ends of the pad 1 by acetylene-oxygen electric welding. Lead 5 is put on porcelain tube 6, is to avoid press 7 and lead 5 Unicom, also plays fixing role.

[0024] Utilize mica sheet and magnesia or sodium chloride to fill in the pressure groove in the middle of gasket 1, cut off the direct contact between anvil 8 and heating source-gasket 1, use magnesia layer or sodium...

Embodiment 2

[0025] Embodiment 2 The structure of the device of the present invention, assembly

[0026] (1) see image 3 , the structure of the device of the present invention has: upper and lower anvils 8 form a pair of anvils, a gasket 1 is placed in the middle of the upper and lower anvils 8 for sealing pressure, and the upper and lower supporting blocks 9 are used as bases for the anvils. 9 and the anvil are placed in the cavity of the press 7 to implement high pressure on the sample between the anvil surfaces of the two anvils 8 . Such as figure 1 The gasket 1 is connected with direct current as the heating source, and the upper and lower sides of the gasket 1 are padded with mica sheets as the insulating layer 2 for pre-compression, and a layer of magnesium oxide or chlorine is laid in the pressure groove formed by the pre-pressing of the gasket 1 and the mica sheet. Sodium chloride layer; the thermocouple 3 for detecting temperature is placed under the lower insulation layer 2. ...

Embodiment 3

[0033] Embodiment 3 is to the measurement of sample

[0034]Using the device of the present invention to perform high-temperature and high-pressure in-situ Raman measurement on magnesium silicate shows that the device of the present invention can be fully used in the actual high-temperature and high-pressure spectrum measurement. Figure 4 It is the data map of the high temperature and high pressure in situ Raman experiment completed under the condition of 5GPa using a diamond anvil. Figure 5 It is the data map of the high temperature and high pressure in situ Raman experiment completed under the condition of 0.3GP using the white gemstone anvil.

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PUM

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Abstract

The invention relates to a high temperature and high voltage experimental device for heating a gasket, pertaining to the technical field of high temperature and high voltage. The structure of the device is as follows: two anvil cells (8) in diamond or white gem material form a top-to-top anvil and holes are opened in the center of a gasket (1) to be used as a sample heating chamber (4), the anvilcells (8) are arranged in the chamber body of a pressing machine (7) to be pressed; the central part of the gasket (1) is made into a shape with the central width smaller than the width in two ends; the position of the gasket (1) opposite to the anvil face of the anvil cells (8) is padded with a mica sheet used as an insulating and thermal-preventing layer (2); the two ends of the gasket (1) are respectively welded with conducting wires (5) which are used for charging the gasket (1) with direct current to realize local heating of sample chamber area in high voltage equipment. The experimentaldevice has simple structure, good repeatability and low cost, and the construction of the system can be easily completed in a high voltage laboratory. Therefore, the invention is a high-temperature and high-voltage technology with good potential.

Description

technical field [0001] The invention belongs to the technical field of high-temperature and high-pressure devices, and in particular relates to a simple repeatable in-situ measurement high-temperature and high-pressure experimental device. Background technique [0002] In the past two hundred years, geophysicists have been trying to simulate the environment inside the earth in various ways, and then study its material composition, rock layer migration, and phase transformation. Since 1762, after more than 200 years of development, high-pressure technology has been greatly developed, but high-temperature and high-pressure technology has always been a difficult problem at home and abroad. In recent decades, some methods have emerged based on the most commonly used diamond-anvil device (DAC) pressurization platform, but these methods have certain disadvantages. For example: the structure is too complex, it is difficult to repeat and generalize the structure, or the pressure an...

Claims

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Application Information

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IPC IPC(8): G01N3/18G01N21/65
Inventor 邹广田梁桁楠邹勃杨凯峰
Owner JILIN UNIV
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