Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for regulating wavelength of light emitted by LED through stress and corresponding white light LED

A luminous wavelength, white light technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of phosphor powder anti-ultraviolet degradation packaging materials that need to be further studied, ultraviolet LEDs are difficult to obtain, and low doping efficiency , to achieve high electrical conversion efficiency, simple circuit, and convenient preparation method

Inactive Publication Date: 2009-11-18
江苏华功半导体有限公司
View PDF2 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The main problem with this method is that due to low doping efficiency and low quantum efficiency, it is difficult to obtain high-performance UV LEDs. In addition, phosphors and packaging materials that resist UV degradation need further research.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for regulating wavelength of light emitted by LED through stress and corresponding white light LED
  • Method for regulating wavelength of light emitted by LED through stress and corresponding white light LED
  • Method for regulating wavelength of light emitted by LED through stress and corresponding white light LED

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] The structure of the GaN-based LED device of the present invention is as follows figure 1 As shown, on the sapphire substrate 1 are GaN nucleation layer 2, non-doped GaN layer 3, first n-type GaN layer 4 and SiO 2 A growth window is opened on the mask 5, and a second n-type GaN layer 6, a blue-light active layer 7 and a p-type GaN layer 8 are grown sequentially at the growth window. Through the stress adjustment of the growth window, the LED can emit purple light. The specific preparation process is as follows:

[0024] 1. With common metal organic chemical vapor deposition (MOCVD) equipment, substrate 1 adopts the sapphire substrate of (0001) face, hydrogen (H 2 ) atmosphere, bake the substrate at a high temperature of 1100°C to 1150°C for 5 to 15 minutes, cool down to 450°C to 550°C, and grow a GaN nucleation layer 2 with a thickness of 25nm at low temperature using trimethylgallium and ammonia as sources , and then increase the temperature to 1050°C to grow a 2000n...

Embodiment 2

[0033] The preparation steps are the same as in Example 1, wherein the basic unit pattern of the growth window in step 4 is as follows image 3 As shown, the growth window is a regular hexagon with a side length of 180 μm, and the shortest distance between adjacent regular hexagons is 0.05 mm. The electroluminescence spectra of the obtained samples are shown in Figure 6 As shown in b) (measurement condition is the same as embodiment one), send yellow-green fluorescence

Embodiment 3

[0035] The preparation steps are the same as in Example 1, wherein the basic unit pattern of the growth window in step 4 is as follows Figure 4 As shown, the growth window is a circle with a diameter of 350 μm, and the shortest distance between adjacent circles is 0.05 mm. The electroluminescence spectra of the obtained samples are shown in Figure 6 As shown in c) (measurement condition is the same as embodiment one), send blue-purple fluorescence

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for regulating the wavelength of light emitted by an LED, which comprises the following steps: firstly, growing a first n-shaped ohm contact layer on a buffering layer; then depositing a layer of SiO2 films as mask films; disposing a growing window with a certain geometrical shape and size on the mask films; and then continuously growing a second n-shaped ohm contact layer, an active layer and a p-shaped ohm contact layer at the growing window. An instrument which is prepared under the same growing process condition emit radiation light with different wave bands in such a way that growing windows with different shapes and sizes regulate the inside stress of a secondary epitaxial instrument. By adopting the special method, a white light LED can be prepared, i.e. the growing windows with different shapes, sizes and amounts are designed at different areas of the mask films according to a preset design, and the white light is obtained through mixing radiation lights which can be emitted from different wave bands of one instrument. The LED instrument can emit the white light by only one chip and has the advantages of simple and convenient preparation, simple circuit, no need of fluorescence, long service life and higher photoelectric transformation efficiency.

Description

technical field [0001] The invention relates to the field of semiconductor lighting and the technical field of metal organic chemical vapor deposition (MOCVD), in particular to a method for adjusting the emission wavelength of a single-chip light-emitting diode (LED) device, and a single-chip white light LED. Background technique: [0002] At present, the mainstream methods of realizing white light LED in China and even in the world are still the following three. One of them is to use GaN-based blue light, green light and GaAs-based red LED to form a complete three-color light emitting system. White light for lighting purposes can be obtained by packaging the LEDs of these three colors together in a certain proportion. Each chip packaged by this method needs an independent drive circuit, so the control circuit is relatively complicated and the cost is high. The other, and the most common, is GaN-based blue LEDs using phosphor conversion methods. This method is to evenly s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00
Inventor 张国义杨志坚方浩陶岳彬桑立雯李丁
Owner 江苏华功半导体有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com