Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Membrane-type gas enrichment device based on polyimide film

A polyimide film and concentrator technology, which is applied in the direction of instruments, scientific instruments, measuring devices, etc., can solve the problems of gas flow limitation, reduction of effective contact, and unfavorable improvement of enrichment rate

Inactive Publication Date: 2009-12-16
UNIV OF ELECTRONIC SCI & TECH OF CHINA
View PDF1 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the CASPAR concentrator is equivalent to a sieve, and the airflow flows perpendicular to the sieve surface, which reduces the effective contact with the adsorption film on the sieve surface, which is not conducive to improving the enrichment rate
Moreover, as a part of the gas detector, the gas flow rate of the enricher must be limited by the applicable flow range of the detector
For some detectors, the advantages of CASPAR's large gas flow cannot be used

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Membrane-type gas enrichment device based on polyimide film
  • Membrane-type gas enrichment device based on polyimide film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Example 1 - polyimide membrane type gas enricher

[0019] figure 1 It is a structural schematic diagram of a gas concentrator based on a polyimide diaphragm, which mainly includes a silicon substrate 1, a suspended diaphragm 2 (polyimide film), a thin film heater 3, an adsorption film 4, a cavity 5, and a top cover 6 (glass top cover), gas passage 7, air inlet 8, air outlet 9. Typically, about 500 μm thick silicon is used as the substrate. Firstly, a polyimide film was prepared by spin-coating method on the front side of the silicon substrate 1, and then cured at 380°C under a nitrogen atmosphere. Heat at a rate of 220°C for 30 minutes, and finally heat to 380°C for 1 hour. After the polyimide film is prepared, a metal platinum film with a thickness of about 200 nm is deposited on it by magnetron sputtering, and a serpentine film heater 3 is formed by photolithography etching. Then, reactive ion etching (DRIE) is used to etch away the silicon substrate 1 below the h...

Embodiment 2

[0021] Example 2 - polyimide membrane type gas enricher with heat conduction layer

[0022] figure 2 It is a structural schematic diagram of a polyimide membrane type gas enricher with a heat conducting layer of the present invention. Its main implementation method is the same as Example 1, the difference is that after the heating element 3 is prepared, a layer of AlN film is prepared on the heating element 3 as a heat conduction film 10 by radio frequency sputtering method, the film thickness is about 1 μm, and then An adsorption film 4 is deposited thereon. Due to the excellent thermal conductivity of AlN, the temperature rise rate of the enricher is faster, and the temperature can be raised to 250°C within 70s, and the enrichment rate is also increased, about 340.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a membrane-type gas enrichment device based on a polyimide film, comprising a silicon substrate, a top cap and an enrichment region arranged between the silicon substrate and the top cap; the enrichment region comprises a hanging membrane, a film heater and an adsorption film, the hanging membrane is arranged on the silicon substrate, the film heater and the adsorption film are arranged on the surface of the hanging membrane, the top cap is provided with an air inlet and an air outlet, an airflow passage is formed between the hanging membrane and the top cap; the invention is characterized in that the hanging membrane adopts the polyimide film which is not provided with a through hole, and airflow in the airflow passage flows along the surface thereof. Due to excellent tenacity of the polyimide film, the size of the polyimide film can be far greater than the size of the membrane of inorganic rigid materials such as SiN and SiO2, not only is the enrichment area greatly enlarged but also the effective contact between the airflow and the adsorption film is also given into consideration, thus improving the enrichment ratio.

Description

technical field [0001] The invention relates to the technical field of gas concentrators, in particular to a membrane-type gas concentrator based on a polyimide film. Background technique [0002] The detection of extremely low-concentration atmospheres has always been a huge challenge for various analytical instruments. In gas chromatography (GC), mass spectrometry (MS), ion mobility spectrometry (IMS), surface acoustic wave sensor (SAW), flame ion detector ( FID) and other analysis systems with an enricher at the front end can increase the detection capability of the system by 1-3 orders of magnitude, and the enricher has become an indispensable and important component of a high-sensitivity gas test system. [0003] The enricher is mainly composed of adsorption materials and heaters. Its working principle is to firstly make the gas to be tested pass through the adsorption material, and after enriching for a period of time, heat the adsorption material to desorb the adsorbe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01N30/08
Inventor 杜晓松蒋亚东夏乐洋肖华
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products