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Method for preparing Sn doped Bi2S3 optical film

An optical thin film, 3·5H2O technology, applied in chemical instruments and methods, crystal growth, electrical components, etc., can solve problems such as unreported thin films, and achieve the effects of low cost, easy operation and simple equipment

Inactive Publication Date: 2010-02-10
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] So far, the electrodeposition method to prepare Sn-doped Bi 2 S 3 The preparation of thin films has not been reported

Method used

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  • Method for preparing Sn doped Bi2S3 optical film
  • Method for preparing Sn doped Bi2S3 optical film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] Embodiment 1: at first will analyze pure Bi(NO 3 ) 3 ·5H 2 O was added to distilled water, and placed in an ultrasonic generator to ultrasonically disperse it to prepare Bi 3+ Concentration is the transparent solution of 0.0125mol / L, and the gained solution is recorded as A; Then, add analytically pure Na in A solution 2 S 2 o 3 and trisodium citrate, making the mixed solution [Bi 3+ ]: [S 2 o 3 2- ]: [C 6 h 5 o 7 3- ]=1:5:1 molar ratio, adjust the pH value to be 4.5 under stirring, and the gained solution is denoted as B; Analytical pure SnCl 2 2H 2 O is added to distilled water to configure Sn 2+ A transparent solution with an ion concentration of 1.25mmol / L, the resulting solution is denoted as C; add a 1% volume fraction of the C solution of the B solution to the B solution to form a precursor solution, and the resulting solution is denoted as D; the D solution is placed in the electrodeposition In the device, the ITO glass substrate was ultrasonicall...

Embodiment 2

[0017] Embodiment 2: at first will analyze pure Bi(NO 3 ) 3 ·5H 2 O was added to distilled water, and placed in an ultrasonic generator to ultrasonically disperse it to prepare Bi 3+ Concentration is the transparent solution of 0.02mol / L, and the gained solution is recorded as A; Then, add analytically pure Na in A solution 2 S 2 o 3 and trisodium citrate, making the mixed solution [Bi 3+ ]: [S 2 o 3 2- ]: [C 6 h 5 o 7 3- ]=1: 6: 1 molar ratio, adjust the pH value to be 5.5 under stirring, and the gained solution is denoted as B; Analytical pure SnCl 2 2H 2 O is added to distilled water to configure Sn 2+ A transparent solution with an ion concentration of 1.25mmol / L, the resulting solution is denoted as C; add 0.2% volume fraction of the C solution of the B solution to the B solution to form a precursor solution, and the resulting solution is denoted as D; the D solution is placed in the electrodeposition In the device, the ITO glass substrate was ultrasonicall...

Embodiment 3

[0018] Embodiment 3: first will analyze pure Bi(NO 3 ) 3 ·5H 2 O was added to distilled water, and placed in an ultrasonic generator to ultrasonically disperse it to prepare Bi 3+ Concentration is the transparent solution of 0.03mol / L, and the gained solution is marked as A; Then, add analytically pure Na in A solution 2 S 2 o 3 and trisodium citrate, making the mixed solution [Bi 3+ ]: [S 2 o 3 2- ]: [C 6 h 5 o 7 3- ]=1: 7: 1 molar ratio, adjust the pH value to be 6.5 under stirring, and the gained solution is denoted as B; Analytical pure SnCl 2 2H 2 O is added to distilled water to configure Sn 2+A transparent solution with an ion concentration of 1.25mmol / L, the resulting solution is denoted as C; add a 0.8% volume fraction of the C solution of the B solution to the B solution to form a precursor solution, and the resulting solution is denoted as D; the D solution is placed in the electrodeposition In the device, the ITO glass substrate was ultrasonically cl...

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Abstract

The invention relates to a method for preparing an Sn doped Bi2S3 optical film. The method comprises the following steps: adding analytically pure Bi(NO3)3*5H2O into distilled water to obtain a solution A; adding analytically pure Na2S2O3 and trisodium citrate into the A solution to obtain a solution B; adding analytically pure SnCl2*2H2O into the distilled water to obtain a solution C; adding the C solution into the B solution to obtain a solution D; putting the D solution into an electric precipitation device, washing an ITO glass basal plate by ultrasonic in ethanol to be served as a cathode, adopting graphite as an anode and preparing an Sn doped Bi2S3 film on the ITO glass basal plate by a cathode constant-voltage precipitation mode; and airing the prepared film naturally in the airafter finishing precipitation so as to obtain the Sn doped Bi2S3 optical film. The invention adopts an electric precipitation method to prepare the Sn doped Bi2S3 optical film with uniform microscopic appearance. The method has simple equipment and simple and convenient operation without an expensive vacuum device and can obtain the Sn doped Bi2S3 optical film with low cost and high efficiency.

Description

Technical field: [0001] The invention relates to a Sn-doped Bi 2 S 3 The preparation method of material, be specifically related to a kind of Sn-doped Bi 2 S 3 Preparation method of optical thin film. Background technique [0002] Bi 2 S 3 It is an important semiconductor material with a forbidden band width of 1.2-1.7eV, Bi 2 S 3 Thin-film materials are well suited for the light-absorbing layer of solar cells. So far, many researchers have successfully synthesized Bi with different structures by using ionic liquid method, thermal solvent method, hydrothermal method, microwave hydrothermal method and other methods. 2 S 3 Nanomaterials such as Zhao Rongxiang, Xu Zhude, Li He and Xu Huili et al [Zhao Rongxiang, Xu Zhude, Li He, etc. Journal of Inorganic Chemistry, 2007, 5(23): 839-843. Bismuth sulfide single crystal nanorods were synthesized using liquid as the reaction medium; Sheng-Cong Liufu, Li-Dong Chen, Qun Wang et al [Sheng-Cong Liufu, Li-Dong Chen, Qun Wang, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B30/02C30B29/46H01L31/032H01L31/0392H01L31/18
Inventor 黄剑锋王艳曹丽云朱辉吴建鹏
Owner SHAANXI UNIV OF SCI & TECH
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