Method for manufacturing high-frequency high-voltage diode by using gas phase doping area fused silicon chip

A gas-phase doping, high-frequency and high-voltage technology, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems that restrict the development of ultra-high-frequency high-voltage diodes, limit the output of NTD silicon wafers, and limit the output of fused silicon single crystals, etc. problems, to achieve the effect of great practical and promotion value, superior product performance, and alleviating the serious shortage of supply

Inactive Publication Date: 2010-02-24
NANTONG GAOXIN ELECTRONICS
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Problems solved by technology

The cost of neutron irradiation per kilogram of silicon single crystal is high, and a neutron reactor consumes considerable energy; (3) It is very difficult to dope silicon single crystal with low resistivity by neutron irradiation, and the lower limit of doping is generally 30Ω. cm, neutron irradiation doping beyond this lower limit is extremely difficult, and the cost rises sharply, which seriously restricts the development of ultra-high-frequency and high-voltage diodes; (4) The yield of zone-melted silicon single crystal is limited by neutron irradiation resources and safety control Restrictions, unable to meet market demand
In particular, the state pays close attention to safety production, which limits the output of NTD silicon wafers

Method used

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Embodiment Construction

[0034] Taking the silicon wafer melted in the vapor phase doping zone at 3 o'clock as an example, the method for manufacturing a high frequency high voltage diode by melting the silicon wafer in the vapor phase doping zone of the present invention includes the following steps:

[0035] (1) Fully test the melted silicon wafer in the vapor phase doping zone, the resistivity of the silicon wafer at R / 2 point ρ 1 For: 28Ω.cm≤ρ 1 ≤42Ω.cm;, the resistivity of the silicon chip R / 2 point in this embodiment is 32Ω.cm≤ρ 1 ≤38Ω.cm;

[0036] (2) The qualified silicon wafers tested in step (1) are formed into a diffusion batch, and the average resistivity of the silicon wafers at R / 2 points of the diffusion batch is ρ R / 2 For: 30Ω.cm≤ρ R / 2 ≤40Ω.cm, average resistivity ρ at R / 2 point of silicon wafer in this embodiment R / 2 For: 34Ω.cm≤ρ R / 2 ≤38Ω.cm;

[0037] (3) Cleaning the diffusion batch composed of step (2) to remove surface impurities;

[0038] (4) The diffusion batch silicon wafers cleaned in ...

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Abstract

The invention relates to a method for manufacturing a high-frequency high-voltage diode by using a gas phase doping area fused silicon chip. The method manufactures the high-frequency high-voltage diode by adopting the gas phase doping area fused silicon chip instead of a neutron irradiation area fused silicon single crystal (NTD) so as to reduce the demand of the neutron irradiation area fused silicon single crystal and reduce the neutron irradiation hazards and pollution; and the frequency and the property of the manufactured high-frequency high-voltage diode are consistent, the forward andreverse parameters are equal to those of an NTD chip, the production cost is greatly reduced, the situation that the NTD chip resource is seriously insufficient is relieved, and the performance of a product is excellent and stable.

Description

Technical field [0001] The invention relates to the manufacture of semiconductor diodes, in particular to a method for manufacturing high-frequency and high-voltage diodes by melting silicon wafers in a vapor-phase doped zone. Background technique [0002] After searching the relevant patent documents, the method for manufacturing high-frequency and high-voltage diodes by melting silicon wafers in a vapor-phase doped zone as in the present invention has not yet been retrieved. For a long time, neutron-irradiated silicon single crystal (NTD) has been used to manufacture high-frequency and ultra-high-frequency high-voltage diodes of various specifications. This is also the silicon single crystal material variety commonly used in similar products in the world. Although NTD silicon wafers can meet the manufacturing requirements of high-frequency diodes and meet the manufacturing requirements of ultra-high-frequency high-voltage diodes within a certain range in terms of characteristic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/329H01L21/66
Inventor 缪玉华陈许平蔡培林刘卉孙建兵
Owner NANTONG GAOXIN ELECTRONICS
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