Manufacturing method of light emitting diode (LED) based on inversed roughened surface Gan-base vertical structure

Abstract

The invention discloses a manufacturing method of an LED based on an inversed roughened surface Gan-base vertical structure, which comprises the following steps: growing a non-doped GaN material layeron a spphire substrate by adopting an MOCVD method; and continuously growing an LED extension illuminating material layer after carrying out anisotropic etching on the non-doped GaN material layer. After etching, the bottom surface of the non-doped GaN material layer and spphire form a discontinuous bonding interface, on the one hand, the LED extension stress of the release part improves the quality of an LED extension crystal lattice and improves the internal quanntum efficiency; and on the other hand, after the spphire substrate is removed, the discontinuous bonding interface naturally inverses into a roughened light emergent surface and improves the light collection efficiency of LED devices, therefore, the LED with GaN-based vertical structure has higher illuminating efficiency and isparticularly suitable for heavy current drive.

Description

technical field [0001] The invention relates to a method for manufacturing a GaN-based semiconductor light-emitting device, in particular to a method for manufacturing a GaN-based vertical structure light-emitting diode based on an inverted rough surface. Background technique [0002] Because sapphire substrates are easy to manufacture and low in price, most gallium nitride (GaN)-based epitaxial materials are grown on sapphire substrates at present. However, the GaN-based epitaxy using sapphire as the growth substrate has the following disadvantages: 1. There is a large lattice mismatch and thermal mismatch between the GaN-based semiconductor material and the sapphire substrate, resulting in the GaN-based epitaxy material High defect density (10 8 -10 10 cm -2 ), so that most of the electrical input is converted to non-radiative recombination. In order to solve this problem, technologies such as lateral epitaxial growth (ELOG) and patterned sapphire substrate (PSS) have ...

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Problems solved by technology

[0003] In order to comprehensively solve the above-mentioned problems of low efficiency of GaN-based light-emitting devices caused by the high-density defects, low light extraction efficiency and low thermal conductivity of the sapphire substrate of GaN-based epitaxy using sapphire as the growth substrate, the present invention innovatively proposes a Fabrication method of GaN-based vertical structure light-emitting diode with inverted rough surface

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