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Highly reliable gold alloy bonding wire and semiconductor device

A technology of bonding wire and gold alloy, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, welding media, etc.

Inactive Publication Date: 2010-03-03
TANAKA DENSHI KOGYO KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Moreover, although this bonding wire has high mechanical strength, due to the existence of all solid-soluted silver, the bonding reliability between the aluminum pad and the aluminum crystal pad is worse than that of a pure gold wire with a purity of 99.99% by mass.

Method used

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  • Highly reliable gold alloy bonding wire and semiconductor device

Examples

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Embodiment 1

[0033] The gold-silver alloy of the preferred embodiment of the present invention completely contains silicon or germanium, and trace elements of aluminum and copper, and the content of silver is greater than the total content of the trace elements. In particular, when the content of silver is in the range of 5 to 10 times the total content of trace elements in a high-temperature environment, an intermetallic compound in which gold and aluminum are stabilized can be obtained. joint reliability.

[0034] A gold-silver alloy having the composition shown in Table 1 was melted and cast, and processed by wire drawing to produce gold-silver alloy wires for bonding wires having a wire diameter of 25 μm (hereinafter referred to as bonding wires of the present invention) 1 to 24 and Gold-silver alloy wires 25 to 31 for bonding wires for comparative examples (hereinafter referred to as comparative bonding wires). The specific resistance of these bonding wires was measured, and the resu...

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PUM

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Abstract

Disclosed is an Au alloy bonding wire which is low in electrical resistance for an Al electrode of a semiconductor device, while being improved in bonding reliability. Also disclosed is a semiconductor device which is connected with an Al electrode pad by such a wire. Specifically disclosed is a gold alloy bonding wire which is characterized by consisting of 0.02-0.3% by mass of Ag, 10-200 ppm bymass of at least one of Ge and Si in total and / or 10-200 ppm by mass of at least one of Al and Cu in total and the balance of Au. Also specifically disclosed is a semiconductor device which is connected with an Al or Al alloy electrode pad by such a gold alloy bonding wire.

Description

technical field [0001] The present invention relates to a gold alloy bonding wire suitable for connecting IC chip electrodes used in semiconductor devices and substrates such as external leads, a semiconductor device using this bonding wire, and a bonding structure between this bonding wire and aluminum or aluminum alloy . In particular, it relates to a gold alloy used in a high-temperature environment for vehicle mounting or high-speed equipment, a semiconductor device using the bonding wire, and a bonding structure between the bonding wire and aluminum or an aluminum alloy. Background technique [0002] For a long time, as the connection gold wire between the IC chip electrode and the external lead of the semiconductor device, the gold wire with a purity of 99.99 mass% or more containing trace amounts of other metal elements in the high-purity gold is often used because of its superior reliability. . One end of this pure gold wire is a pure aluminum pad or an aluminum al...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/60C22C5/02
CPCH01L2924/01032H01L2224/48624H01L2924/01046C22C5/02H01L2924/01082H01L2924/01004H01L2224/05624B23K35/0227H01L24/02B23K2203/10H01L2924/20752H01L2924/01327H01L2924/01029H01L2924/01105H01L2924/01027H01L2224/85201H01L2224/859H01L2924/014H01L2924/01013H01L2224/45015H01L2924/01204H01L2224/4845H01L2924/01047H01L2924/01079H01L24/45H01L2924/14H01L2224/48011H01L2924/01005H01L2924/01033H01L2924/01006B23K35/3013H01L2924/0102H01L2924/20755H01L2924/01074H01L2924/01014H01L2924/01057B23K2201/36H01L2224/45144H01L2924/01012H01L2924/181H01L2924/00014H01L2924/00011B23K2101/36B23K2103/10H01L2924/20656H01L2924/013H01L2924/00H01L2224/43
Inventor 村井博千叶淳天田富士夫
Owner TANAKA DENSHI KOGYO KK
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