Highly reliable gold alloy bonding wire and semiconductor device
A technology of bonding wire and gold alloy, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, welding media, etc.
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[0033] The gold-silver alloy of the preferred embodiment of the present invention completely contains silicon or germanium, and trace elements of aluminum and copper, and the content of silver is greater than the total content of the trace elements. In particular, when the content of silver is in the range of 5 to 10 times the total content of trace elements in a high-temperature environment, an intermetallic compound in which gold and aluminum are stabilized can be obtained. joint reliability.
[0034] A gold-silver alloy having the composition shown in Table 1 was melted and cast, and processed by wire drawing to produce gold-silver alloy wires for bonding wires having a wire diameter of 25 μm (hereinafter referred to as bonding wires of the present invention) 1 to 24 and Gold-silver alloy wires 25 to 31 for bonding wires for comparative examples (hereinafter referred to as comparative bonding wires). The specific resistance of these bonding wires was measured, and the resu...
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