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Process for smelting macrocrystalline green silicon carbide

A technology of green silicon carbide and process, which is applied in the field of large crystal green silicon carbide smelting process, can solve the problems of small green silicon carbide crystal grains, high smelting cost, unreasonable cloth, etc., and achieve compact and firm structure, high content, and reduce waste Effect

Active Publication Date: 2014-08-06
TONGHUA HONGXIN ABRASIVE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage is that the material distribution in the furnace is unreasonable, the smelting cost is high, and the obtained green silicon carbide grains are small (1-3mm)

Method used

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  • Process for smelting macrocrystalline green silicon carbide
  • Process for smelting macrocrystalline green silicon carbide

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Embodiment Construction

[0015] see figure 1 , 2 , the large crystal green silicon carbide smelting process includes the following steps: the secondary roasting process will purchase the quartz sand and petroleum coke that meet the quality requirements according to the formula of Si:C ratio of 1.48-1.54, and put them into the mixer for metering and stirring to achieve homogenization . The homogenized raw materials are transported into the furnace bottom (furnace bottom material area 1) for primary roasting, the furnace middle reaction zone III part material area 3, the furnace middle reaction zone IV part material area 4 and the furnace middle reaction zone V part material area 5 Load the charge after the secondary roasting, the material area 7 of the external heat preservation zone VII part, and the material area 8 of the external heat preservation zone VIII are filled with the material after the primary roasting for secondary roasting. The installed furnace is energized for about 32-36 hours for s...

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Abstract

The invention relates to silicon carbide smelting, in particular to a process for smelting macrocrystalline green silicon carbide, which comprises the following: a, a step of preparing raw materials of quartz sand and petroleum coke in a ratio of 1.48 to 1.54; b, a step of material mixing; c, a step of furnace charge, in which homogenized raw materials are delivered to a material area (1) at the bottom of a furnace, a burden material subjected to secondary roasting is filled in reaction areas (3, 4 and 5) in the middle of the furnace, and a burden material subjected to primary roasting is filled in the external heat preservation areas (7 and 8); d, a step of smelting, in which the charged furnace is electrified for smelting for 32 to 36 hours, the power of a transmission transformer is 8,000 KVA, and after cooling for 72 hours, the materials are discharged and graded. By adopting a smelting process of roasting for two times, the process reduces the waste of primarily roasted material, the specific consumption of the petroleum coke, the quartz sand and power, and saves energy. Meanwhile, as a long-time lower power transmission is adopted, the reaction of grains is more uniform and complete and the structure of the grains is more compact and firm; and compared with products in the prior art, the product has higher hardness, larger grain size, higher content and more desirable powder grain form.

Description

technical field [0001] The invention relates to a silicon carbide smelting process, that is, a large crystal green silicon carbide smelting process. Background technique [0002] In the prior art, silicon carbide includes black silicon carbide and green silicon carbide, among which green silicon carbide is made of quartz sand and petroleum coke as the main raw materials, and is smelted by resistance furnace at high temperature. Green silicon carbide grains are the main raw material for cutting micropowder in the production line, and its grain size directly affects the hardness and content of the micropowder. The green silicon carbide grains are processed into fine powder by crushing, chemical treatment and other processes, which are mainly used in engineering ceramics, metallurgy, chemical industry, electronics, aerospace, refractory materials and other industries, especially for high-temperature semiconductor materials and single crystal silicon (electronic chips) ) and po...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B31/36
Inventor 佟俊华刘雁
Owner TONGHUA HONGXIN ABRASIVE
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