Method for growing ZnSe monocrystal nanowire

A single-crystal nano-catalyst technology, applied in nanotechnology, nanotechnology, nanostructure manufacturing, etc., can solve problems such as unfavorable large-area preparation of products, difficult to control product growth, etc., to achieve easy promotion, avoid impurities and other by-products, Uniform effect

Inactive Publication Date: 2010-04-14
XINJIANG UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] From the above reports, it can be seen that the preparation of nanostructured ZnSe by chemical vapor deposition requires carrier gas, the growth of the product is difficult to control, and it is not conducive to the preparation of products in large areas, while the thermal evaporation process

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  • Method for growing ZnSe monocrystal nanowire
  • Method for growing ZnSe monocrystal nanowire

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Embodiment 1

[0025] Use high-purity ZnSe powder (99.99%) as raw material and high-purity Bi powder as catalyst. After the two are uniformly mixed at 1mol:0.008mol, the powder is placed on the molybdenum boat heater, and zinc foil is selected as the substrate for evaporation. About 2.5cm above the source, seal the evaporation chamber, when the vacuum reaches 2×10 -2 After Pa, the current was gradually increased to 110A at a rate of 3.3A / min and then kept for 10 minutes. There are yellow deposits on the substrate surface. The scanning electron microscope image shows that the surface morphology of the substrate deposit is a nanowire with a diameter of 25-120nm and a line length of 2-3μm, such as figure 2 . Its transmission electron microscope picture is as image 3 , high-resolution transmission electron microscope pictures such as Figure 4 , it can be seen that it is a single crystal. XRD analysis results show that the main phase of the product is cubic ZnSe, such as figure 1 .

Embodiment 2

[0027] High-purity ZnSe powder (99.99%) is used as raw material, high-purity Bi powder is used as catalyst, the two are evenly mixed according to the ratio of 1mol:0.01mol, the powder is placed on the molybdenum boat heater, and the molybdenum sheet is placed on the substrate About 1.0cm above the evaporation source. Airtight evaporation chamber, when the vacuum degree reaches 8×10 -3 After Pa, the current was gradually increased to 110A at a rate of 3.3A / min and then kept for 10 minutes. There are yellow deposits on the substrate surface. The surface morphology of the substrate deposit observed by SEM is a single crystal nanowire with a length of 3-4 μm and a diameter of 70-100 nm, such as Figure 5 .

Embodiment 3

[0029] High-purity ZnSe powder (99.99%) is used as raw material, high-purity Bi powder is used as catalyst, the two are evenly mixed according to the ratio of 1mol:0.06mol, the powder is placed on the molybdenum boat heater, and the silicon wafer is used as the substrate About 3cm above the evaporation source. Airtight evaporation chamber, when the vacuum degree reaches 6.0×10 -3 After Pa, the current was gradually increased to 140A at a rate of 3.3A / min and then kept for 10 minutes. A yellow deposit was obtained on the substrate. The surface morphology of the deposit observed by SEM is uniformly distributed nanowires with a length of 1-2 μm and a diameter of 50-80 nm, such as Image 6 .

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Abstract

The invention discloses a method for growing a ZnSe monocrystal nanowire by vacuum thermal evaporation under the assistance of a catalyst, comprising the following processes: evenly mixing ZnSe power and metallic Bi powder according to the mol ratio of 1 0.008-1: 0.06 to prepare raw material: putting into a resistance heating boat made of molybdenum sheets, and placing various substrates at the position 1.0cm-3.0cm above the boat; closing an evaporating furnace, preserving for 5-15 minutes when the vacuum degree of the vacuum evaporating furnace reaches 3*10-2-6*10-3Pa and the electric current of the resistance heating boat is 110-140A, and then obtaining the ZnSe monocrystal nanowire. The prepared cadmium oxide nano rod is ZnSe with a crystalline cubic phase structure; and the invention has the advantages that the obtained cadmium oxide nanowire bundle is suitable for a plurality of substrates and large-scale industrial production, and has large deposition area, evener appearance, simple method and easy popularization.

Description

technical field [0001] The invention belongs to the field of nanostructure growth, and relates to a method for growing ZnSe single-crystal nanowires by a vacuum thermal evaporation method under the assistance of a catalyst. Background technique [0002] ZnSe is a wide-bandgap direct bandgap II-VI semiconductor material (the bandgap width is 2.7eV at 300K), and its optical properties make it have very important application prospects in short-wavelength lasers and other optoelectronic devices. Such as laser diodes, light-emitting diodes, photodetectors, full-color displays, etc. [0003] In recent years, studies have shown that through the control of the microscopic morphology of ZnSe, such as controlled growth of nanowires, nanobelts, nanotubes, nanoarray ZnSe, etc., due to the microscopic size effect, it may have characteristics different from bulk materials, so as to obtain more Wide range of application prospects. [0004] Compared with other II-VI semiconductor material...

Claims

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Application Information

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IPC IPC(8): C01B19/04B82B3/00
Inventor 简基康杨林钰吴荣孙言飞李锦郑毓峰
Owner XINJIANG UNIVERSITY
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