Gallium nitride-based semiconductor device with composite carbon-based substrate and manufacturing method thereof

Abstract

The invention discloses a gallium nitride-based semiconductor device with a composite carbon-based substrate and a manufacturing method thereof. The supporting substrate of the gallium nitride-based semiconductor can be well combined with the epitaxial layer of the gallium nitride-based semiconductor in the aspects of expansion coefficient and deformation, can be matched with the epitaxial layer of the gallium nitride-based semiconductor with a better expansion coefficient, can not crack and deform easily, and has good conductor attributes. The invention has the concrete scheme that the gallium nitride-based semiconductor device comprises the supporting substrate for supporting the epitaxial layer of the gallium nitride-based semiconductor, and the supporting substrate is a graphite substrate of which the inside is permeated with copper having the mass percent of 10%-30%. The invention is mainly applied to an LED semiconductor device of a gallium nitride-based epitaxial layer.

Description

Technical field [0001] The invention relates to a GaN-based semiconductor device and a manufacturing method thereof. Background technique [0002] In the manufacturing process of gallium nitride-based semiconductor devices, a flip-chip technology is currently widely used to produce semiconductor chips with a vertical electrode structure. That is, after growing a gallium nitride-based semiconductor epitaxial layer on a growth substrate, flip the epitaxial wafer to The supporting substrate is then peeled off the growth substrate. The supporting substrate of the semiconductor chip thus produced serves as a part of the circuit. [0003] The support needed in the above process is usually a lower cost silicon substrate or a metal substrate with better thermal conductivity. The selection of the supporting substrate should take into account the thermal conductivity and the expansion coefficient of the substrate and the gallium nitride epitaxial layer, as well as the brittleness of the su...

AI Technical Summary

Problems solved by technology

The metal substrate has good electrical conductivity, but its ductility is too strong, and it is prone to deformation during operation. The thin metal support substrate cannot form a good support for the GaN epitaxial layer

The above support substrate still has some defects as the support substrate, such as the problem of matching the expansion coefficient of the gallium nitride-based epitaxial layer