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Device and method for polishing sapphire substrate material by ultrasound assisted chemical machinery

A sapphire substrate and chemical mechanical technology, applied in the field of polishing sapphire substrate materials, can solve the problems of lack of in-depth understanding of CMP mechanism, insufficient surface quality, low material removal rate, etc., to improve polishing efficiency and quality, reduce Polishing cost and time, simple effect of process operation

Inactive Publication Date: 2010-06-02
TSINGHUA UNIV
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Problems solved by technology

[0003] Chemical mechanical polishing (CMP) is currently the only polishing technology that can achieve global planarization. However, due to the complexity of its process, people still lack a deep understanding of the mechanism of CMP, and many aspects still need to be further studied.
When polishing sapphire substrates with CMP technology, there are problems of low material removal rate and insufficient surface quality

Method used

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  • Device and method for polishing sapphire substrate material by ultrasound assisted chemical machinery
  • Device and method for polishing sapphire substrate material by ultrasound assisted chemical machinery
  • Device and method for polishing sapphire substrate material by ultrasound assisted chemical machinery

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Embodiment Construction

[0024] The present invention will be further described below in conjunction with accompanying drawing:

[0025] A device for ultrasonic-assisted chemical-mechanical polishing of sapphire substrate materials, the schematic diagram of which is shown in figure 1 As shown, the ultrasonic power supply control box 1 is connected to the carbon brush 5 installed on the carbon brush bracket 4 through wires, and the carbon brush 5 connects the positive and negative poles of the ultrasonic power supply to the positive and negative poles of the ultrasonic transducer 6 through a conductive copper slip ring 7 , the ultrasonic transducer 6 is made of a piezoelectric ceramic sheet and an insulating sheet, the ultrasonic transducer 6 is connected with the horn 13 by threads, the polishing head 14 is fixed on the lower end of the horn 13; the horn 13 passes through the rolling bearing 9 Through the support plate 11, the outer ring of the rolling bearing 9 is fixed on the support plate 11 by scr...

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Abstract

The invention discloses a device and a method for polishing a sapphire substrate material by ultrasound assisted chemical machinery, which belong to the technical field of polishing of sapphire substrate materials. An ultrasound power supply is connected to a positive terminal and a negative terminal of an ultrasonic transducer through a conducting wire, a carbon brush and a copper slip ring; the ultrasonic transducer converts an electrical signal into a mechanical vibration signal; and ultrasonic vibration is transmitted to a polishing head and a sapphire substrate arranged on the polishing head through an amplitude transformer. Compared with the traditional chemical mechanical polishing process, the method has the advantages that: due to the adoption of a composite action structure of ultrasonic vibration and chemical machinery, the method reduces the polishing cost and the polishing time of the sapphire substrate, improves surface topography precision of the sapphire substrate, meets the performance requirement of serving as the substrate material, and improves the polishing efficiency and the polishing quality; the polishing efficiency is improved by over one time; and the surface roughness of the polished sapphire is less than angstrom level. The ultrasonic assisted chemical mechanical polishing process is characterized by simple operation, convenience and practicability.

Description

technical field [0001] The invention belongs to the technical field of polishing sapphire substrate materials, in particular to an ultrasonic-assisted chemical mechanical polishing device and method for sapphire substrate materials. Background technique [0002] Sapphire is a multifunctional oxide crystal integrating excellent optical properties, physical properties and chemical properties. The hardness of single crystal sapphire is second only to diamond, and it has good thermal properties, wear resistance, electrical properties and dielectric properties, so it is widely used in optoelectronics, communications, national defense and other fields, and one of the most important applications is as a GaN-based light-emitting diode. (LED) substrate material. LED is the most promising energy-saving technology and industry in the world today. As the most important basic material for LED epitaxial wafers and chip products, sapphire material is an upstream technology product of the ...

Claims

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Application Information

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IPC IPC(8): B24B37/00B24B1/04B28D5/00
Inventor 路新春许文虎潘国顺雷源忠雒建斌
Owner TSINGHUA UNIV
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